Regional Directors

Dr. Charles A. Evans, Jr. (Drew)
Founder Emeritus

Publications

"Computer Programs to Optimize Times of Irradiation and Decay in Multi-Element Activation Analysis," T. L. Isenhour, C. A. Evans, Jr. and G. H. Morrisan, Proceedings of the 1965 International Conference an Modern Trends in Activation Analysis, College Station, Texas (1965).

"Trace Element Survey Analysis of Biological Materials by Spark Source Mass Spectrometry," C. A. Evans, Jr. and G. H. Morrison, Analytical Chemistry 4~,0 869 (1968).

"Time Resolution in Spark Source Mass Spectrometry," C. A. Evans, Jr. and G. H. Morrison, Analytical Chemistry 40,2106 (19b8).

"Routine Analysis of Metals Using a Spark Source Mass Spectrograph with Electrical Detection," C. A. Evans, Jr., R. J. Guidoboni and F. D. Leipziger, Applied Spectroscopy 24, 85 (1970).

"Analysis of Thin Films by Ion Microprobe Mass Spectrometry," C. A. Evans, Jr. and J. P. Pemsler, Analytical Chemistry 42 1060 (1970).

"Ion Microprobe Mass Spedrametric Determination of Oxygen in Copper," C. A. Evans, Jr., Analytical Chemistry 411130 (1970).

"Analytical Applications of an Ion Microprobe Mass Spectrometer-Negative Ion Spectroscopy," C. A. Evans,lr., Advances in Mass Spectrometry 5_, 43b (1971).

"Impurity Distributions in Anodic Films an Tantalum," R. E. Pawel, J. P. Pemsler and C. A. Evans, Jr., Journal of the Electrochemical Society L19, 24 (1972).

"Reduction of a Matrix Effect in Spark Source Mass Spectrometry Using a Solution Doping Technique," R J. Guidoboni and C. A. Evans, Jr., Analytical Chemistry 44 2027 (1972).

"Secondary Ion Mass Analysis: A Technique for Three-Dimensional Characterization," C. A. Evans, Jr., Analytical Chemistry 4--'4 b7A (1972).

"An Electrohydrodynamic Ion Source for the Mass Spectrometry of Liquids," G. A. Evans, Jr. and C. D. Hendricks, Review of Scientific Instruments 43.1527 (I972).

"Spectral InterFerences in Secondary Ion Mass Spectrometry," B. N. Colby and C. A. Evans, Jr., Applied Spectroscopy 27.274 (1973).

"Eiectrrohydradynamic Ionization Mass Spectrometry," B. N. Colby and C. A. Evans, Jr., Analytical Chemistry 45, 1884 (2973).

"An Electric Field Extraction Liquid Ion Source," C. A. Evans, Jr. and C. D. Hendricks, Second International Conference on Ion Sources, Vienna, Austria, September (1972).

"Mass Spectrometric Study of an Electrohydrodynamic Ion Source," B. N. Colby and C. A. Evans, Jr., Second international Conference on Ion Sources, Vienna, Austria, September (1972).

"Ion Microprobe Mass Spectrometer," C. A. Evans, Jr., 1974 Yearbook of the McGraw-Hill Encyclopedia of Science and Technology, McGraw-Hill, New York (1974).

"Ian Probe Mass Spectrometry: Overview," C. A. Evans, Jr., Thin Solid Films 19. 11 (1973) and Ion Beam Surface Layer Analysis, J. W. Msyer and J. F. Ziegler, Eds., Elsevier (Lausanne),(1974)

"Toxic Trace Elements: Preferential Concentration in Respirable Particles," D. F. S. Natusch, J. R Wailace and C. A. Evans, Jr., Science 183. 2(!2 (1974).

"Reduction of Spectral Interferences in Ion Probe Mass Spectrometry," D. K. Bakale, B. N. Colby, C. A. Evans, Ir. and 7. B. Woodhouse, Proceedings of the 8th National Meeting of the Electron Probe Analysis Society of America, New Orleans (1973).

"Secondary Ion Mass Spectrometry - The Ion Probe," C. A. Evans, Jr., Proceedings of the Tutorial Session of the 8th National Meeting of the Electron Probe Analysis Society of America, New Orleans (1973).

"Trace Metals in Airborne Particles," II. F. S. Natusch, R L. Davison, R. E. Lamb, J. R. Wallace and C. A. Evans, Jr., Proceedings of the Third Clean Air Congress, Dusseldorl; Germany (1973).

"Hollow-Cathode Ionization for the Mass Spectrometric Analysis of Conducting Solids;" B. N. Colby and C. A. Evans, Jr., Analytical Chemistry 4-,b 1236 (1974).

"Trace Metals in Fly Ash: Dependence of Concentration of Particle Size," R L. Davisan, D. F. S. Natusch, J. R Wallace and C. A. Evans, Jr., Environmental Science and Technology 8 1107 (1974).

"Comparison of Backscattering Spectrometry and SIMS Analysis of Ta203 Layers," W. K. Chu, M: A. Nicolet, J. W. Mayer, and C. A. Evans, Jr., Analytical Chemistry 46 2136 (1974).

"A Simple Ion Probe Attachment for Existing Mass Spectrometers." R J. Blauner, J. E. Baker and C. A. Evans, Jr., Analytical Chemistry 46, 2171 (1974).

"Electrohydrodynamic Ionization of Liquid Glycerol and Non-Volatile Organic Solutes," D. S. Simons, B. N. Colby and C. A. Evans, Jr., International Journal of Mass Spectrometry and Ion Physics 15, 241 (1974).

'Min Film Compositional Analysis - A Comparison of Techniques," C. A. Evans, Jr., Journal of Vacuum Science and Technology _2, 144 (1975).

"High Mass Resolution Ion Microprobe Mass Spectrometry of Complex Matrices," D. K. Bakale, B. N. Colby and C. A. Evans, Jr., Analytical Chemistry 47,1532 (1975).

"Effect of Oxidizing Ambients an Platinum Silicide Formation: ll. Auger and Backscattering Analyses," R J. Blatlner, C. A. Evans, Jr., S. S. Lau, J. W. Mayer and B. M. LJllrich, Journal of the Electrochemical Society 122, 1732 (1975).

"Interaction of A1 Layers with Polycrystalline Si," R J. Blatmer, C. A. Evans, Jr., K. Nakamura, J. W. Mayer and M.-A. Nicolet, Journal of Applied Physics 46,4678 {1975}.

"Surface Predominance of Trace Elements in Airborne Particles," R. W. LinWn, A. Loh, D. F. S. Natusch, C. A. Evans, Jr. and P. Williams, Science 191, 852 (1976).

"Surface and Thin Film Analysis," C. A. Evans, Jr., Analytical Chemistry 47, 855A {1975}.

"Surface and Thin Film Compositional Analysis: Description and Comparison of Techniques," C. A. Evans, Jr., Analytical Chemistry 47, 818A (1975).

"A Comparison of Mass Spectra from Three Ion Probes," J. G. Bradley, D. Y. Jerome and C. A. Evans, Jr., NBS Workshop on Ion Microprobe Mass Spectrometry, K. F. Heinrich and D. E. Newbury, eds., NBS, Washington, D. C., NB5 Special Publication 427 (1975).

"High Mass Resolution Secondary Ion Mass Spectrometry," P. Williams and C. A. Evans, Jr., NBS Workshop on Ion Microprobe Mass Spectrometry, K. F. Heinrich and D. E. Newbury, eds., NBS, Washington, D. C., NBS Special Publication 427 (1975).

"A Comparison of the Techniques for Silicon Surface Analysis," C. A. Evans, Jr., NBS Report on the ARPAINBS Workshop on Surface Analysis for Silicon Devices, NBS, Washington, D. C., NBS Special Publication SP-440-23 (1975).

"Ion Microprobe Analysis for Niobium Hydride in Hydrogen Embrittled Niobium," P. Williams, C. A. Evans, Jr., M. L. Grossbeck and H. K. Birnbaum, Analytical Chemistry 48, 964 (1976).

"Antimony Doping of Si Layers Grown by Solid Phase Epitaxy," S. S. Lau, C. Canali, K. Nakamura, M.-A. Nicolet, J. W. Mayer, R J. Blatmer and G. A. Evans, Jr., Applied Physics Letzers 28, 148 (1976).

"Application of Ion Probe Analysis to Studies of Hydrogen Behavior in Solids;" M. L. Grossbeck, P. Williams, G. A. Evans, Jr. and H. K. Birnbaum, Physica Status Solidi (A) 34, K97-K99 (1976).

"An Evaluation of the Local Thermal Equilibrium Mode) for Quantitative SIMS Analysis," D. S. Simons, J. E. Baker and C. A. Evans, Jr., Analytical Chemistry 49,1341 (i976).

"A Simple Electronic Aperture for Rastered-Beam Depth Profiles," P. Williams and C. A. Evaas, Jr., International Journal of Mass Spectrometry and Ion Physics 22 327 (1976).

"Sensitivity and Cathode Geometry of the Hollow Cathode Ionization Source," J. R. Wallace, D. F_ S. Nadisch, B. N. Colby and C. A: Evans, Jr., Analytical Chemistry 48, 118 (1976).

"Concentration of Toxic Species in Submicrometer Size Airborne Particles - The Lung as a Preferential Absorption Site," D. F. S. Natusch, J. R. Wailace and C. A. Evans, Jr., American Institute of Chemical Engineering Symposium Series - Pollution Control and Clean Energy 71, 25 (No. 147).

"Solid-Phase Crystallization of Si Films in Contact with A1 Layers," J. Harris, R. J. Bladner, I. D. Ward, C. A. Evans, Jr., H. L. Fraser, M.-A. Nicolet and C. L. Ramiller, Journal of Applied Physics 48,2997 (1977).

"Determination of the Surface Predominance of Toxic Elements in Airborne Particles by Ion Microprobe Mass Spectrometry and Auger Electron Spectrometry," R W. Linton, P. Williams, C. A. Evans, Jr. and D. F. S. Natusch, Analytical Chemistry 49 1514 (197?).

"Workshop on Surface Analysis and Secondary Ion Mass Analysis," C. A. Evans, Jr., B. N. Colby, G. L. Kearns and W. Singer, Analytical Chemistry 45, 398A (1973).

"Depth Profile Detection Limit of 3 x lUls atoms/cm-3 for As in Si Using Cs} Bombardment Negative SIMS," C. A. Evans, h. and P. Williams, Applied Physics Letters 30 559 (1977).

"Evaluation of a Cesium Primary Ion Source on an Ion Microprobe Mass Spectrometer," P. Williams, R K. Lewis, C. A. Evans, Jr. and P. R Hanley, Analytical Chemistry 49. 1399 (1977).

"Pt2Si and PtSi Formation with High-Purity Pt Thin-Films," C. Canali, C. Catellani, M. Prudenziati, C. A. Evans, 3r. and W. H. Wadlia, Applied Physics Letters 31. 43 (1977).

'Mechanism of High-Temperature Instability of Cu0-Ag Thin Film Solar Absorbers," I- J. Blattner, C. A. Evans, Jr. and A. J. Braundmeier, Jr., Journal of Vacuum Science and Technology 14, 1132 (1977).

"Electmhydrodynarnic Ionization Spectrometry of Biochemical Materials," B. P. Stimpsan and C. A. Evans, Jr., Biomedical Mass Spectrometry ,52(1978).

"Anomalous Enhancement of Negative Sputtered Ion Emission by Oxygen," P. William and C. A. Evans, Jr., Surface Science _78, 324 (1978).

"Study of Encapsulants for Annealing of GaAs," K. V. Vaidyanathan, M. J. Helix, D. J. Wolford, B. G. Streetman, R J. Blattner and C. A. Evans, Jr., Journal of the Electrnchemical Society 124, 1781 (I977).

"Kinetic Aspects of Solid-Phase Epitaxial Growth of Amorphous Si," Z. L. Liau, S. S. Lau, M.-A. Nicolet, J. W. Mayer, R. J. Blattner, P. WilGams and C. A. Evans, Jr., Nuclear Instruments and Methods 149,623 (1978).

"Mass Spectrometry of Solvated Ions Generated Directly from the Liquid Phase by Etectrohydrodynamic Ionization," B. P. Stimpson, D. S. Simons and C. A. Evans, Jr., Journal of Physical Chemistry 82, 660 (1978).

"Electrohydrodynamic Ionization Mass Spectrometry: Instrumentation, Mechanisms and Applications," B. P. Stimpson and C. A. Evans, Jr., Journal of Electrostatics 5 411 (1978).

"Characterization of Trace Elements in Fly Ash," D. F. S. Natusch, C. F. Bauer, H. Matusiewicz, C. A. Evans, Jr., J_ Baker, A. Long, R W. Linton and P. K. Hapke, International Conference on Heavy Metals in the Environment, Toronto, Canada (1978).

"Characterizing the Surfaces of Environmental Particles," T. R Keyser, D. F. S. Natusch, C. A. Evans, Jr. and R W. Lintan, Environmental Science and Technology 12.768 (1978).

"Profiling Hydrogen in Materials Using Ion Beams," J. F. Ziegler, C. P. Wu, ...V. R Deline, ...C. A. Evans, Jr. and D. D. Allred, Nuclear Instruments and Methods 149,19 (1978).

"Anomalous Migration of Fluorine and Electrical Activation of Boron in 13172'-Implanted Silicon," M. Y. Tsai, B. H. Streetman, F. Williams and C. A_ Evans, Jr., Applied Physics Letters 32,144 (1978).

"Physical and Electrical Properties of Laser-Annealed Ion-implanted Silicon," A. Gat, J. F. Gibbons, T. J. Magee, J_ Peng, V. R. Deline, P. Williams and C. A. Evans, Jr., Applied Physics Letters 32,276 (1978).

"Fast Diffusion of Elevated Temperature Ion-Implanted Se in GaAs as Measured by Secondary Ion Mass Spectrometry,- A. Lidow, J. F. Gibbons, V. R Define and C. A. Evans, Jr., Applied Physics Letters 32, 144 (1978).

"Ion Implanted Selenium Profiles in GaAs as Measured by Secondary Ion Mass Spectrometry," A. Lidow, J. F. Gibbons, V. R Define and C. A. Evans, Jr., Applied Physics Letters 32, 15 (1978).

"Evaluation of Calcium Fluoride Diffusion Barriers in Cu4lAg High Temperature Solar Absorbers," R J. Blattner, A. J. Braundmeier, Jr. and C. A. Evans, Jr., Proceedings of the Symposium on Thin Film Phenomena: Interfaces and Interactions, 152nd Meeting of the Electrochemical Society, Atlanta, GA (1977).

"Modern Experimental Methods for Surface and Thin Film Chemical Analysis," C. A. Evans, Jr. and R J. Blatmer, Annual Review of Materials Science 8 181(1978).

"Electrohydrodynamic Ionization Mass Spectrometry: Pyrimidines, Purines, Nucleosides and Nucleoides," S. T. F. Lai and C. A. Evans, Jr., Biomedical Mass Spectrometry 6,10 (1979).

"A Method for the Cross-Sectional Examination of Molecular Semiconductor/Metal Film Junctions Using Transmission Electron Microscopy," W. Katz, C. A. Evans, Jr., D. R Eaton and L. R Faulkner, Journal of Vacuum Science and Technology 15, 1561 (1978).

"Solid Solubility of Selenium in GaAs as Measured by Secondary Ion Mass Spectrometry," A. Lidow, J. F. Gibbons, V. R Deline and C. A. Evans, Jr., Applied Physics Letters 32, 572 (1978).

"Recrystallization of Implanted Amorphous Silicon Layers: II. Migration of Fluorine in BF2+-Implanted Silicon," M. Y. Tsai, D. S. Day, B. G. Streetman, P. Williams, and C. A. Evans, Jr., Journal of Applied Physics 50, 188 (1979).

"A Unified Explanation for Secondary Ion Yields," V. R. Deline, C. A. Evans, Jr. and P. Williams, Applied Physics Letters 33 578 (1978).

"Mechanism of the SIMS Matrix Effect," V. R Deline, W. Katz, C. A. Evans, Jr. and P. Williams, Applied Physics Letters 33. 830 (1978).

"Study of Surface Contamination Produced During High-Dose Ion Implantation," M. Y. Tsai, B. G. Streetman, R. J. Blatcner and C. A. Evaos, Jr., Journal of the Electrochemical Society 126, 98 (1979).

"Electrohydrodynamic Ionization Mass Spectrometry of Sulfonates," S. T. F. Lai and C. A. Evans, Jr., Organic Mass Spectrometry 13, 733 (1978).

"Use of a Scanning cw Kr Laser to Obtain Diffusion-Free Annealing of B-Implanted Silicon," A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, P. Williams, V. R. Deline and C. A. Evans, Jr., Applied Physics Letters 33, 389 (1978).

"Gallium Distribution and Electrical Activation in Ga± Implanted Si," V. R. Deline, M. Y. Tsai, B. G. Streetman and C. A. Evans, Jr., Journal of Electronic Materials 8 111 (1979).

"Modern Ion Beam and Related Techniques for Materials Characterization," R J. Blattner and C. A. Evans, Jr., Proceedings of the Fifth International Conference on Crystal Growth, Boston, MA (1977), published in "Crystal Growth and Characterization: A Tutorial Approach," W. Bardsley, D. T. J. Hurk

and J. B. Mullins, eds., North-Holland, (1979), -and Journal of Educational Modules for Materials Science and Engineering 2 1 (1980). .

"Amorphous-Crystalline Transition of Arsenic Implanted Silicon Caused by Multiple-Pulsed Ruby Laser," J. F. Gibbons, J. L. Regolini, A. Lietaila, T. W. Sigmon, T. J. Magee, J. Peng, J. D. Hong, W. Katz and C. A. Evans, Jr., Journal of Applied Physics, 50.4399 (1979).

"Surface Cesium Concentrations in Cesium Ion Bombarded Elemental and Compound Targets," J. E. Chelgren, W. Katz, R. J. Blattner, V. R. Deline, P. William and C. A. Evans, Jr., Journal of Vacuum Science and Technology 16. 324 (1979).

"Improved Depth Resolution in Auger Depth Profiling of Multilayered Thin Films by Reactive Ion Sputtering," R J. Blattner, S. Nadel, C. A. Evans, Jr., A. J. Braundmeier, Jr. and C. W. Magee, Surface and Interface Analysis 1 32 (1979).

"X-ray Debye Temperatures of Zinc Sulfide and Zinc Telluride," R J. Blattaer, L. K. Walford and T. O. Baldwin, Journal of Applied Physics 43, 935 (1972).

"A Comparison of Techniques for Depth Profiling Oxygen in Silicon," G. Mezey, E. Kotai, T. Nagy, L. Lolmer, A. Manuaba, J. Gyalai, V. R Delume, R J. Blatlner and C. A. Evans, Jr., Nuclear Instruments and Methods 167.279 (1979).

"Redistribution of Cr During Annealing of 80Se-Implanted GaAs," C. A. Evans, Jr., V. R. Deline, T. W. Sigmon and A. Lidow, Applied Physics Letters 35, 291 (1979).

"Transient Annealing of Deposited Layers," S. S. Lau, ...R J. Blattner, P. Williams, C. A. Evans, Jr., ...and A. R Kirkpatriek, Proceedings of Laser Effects in Ion Implanted Semiconductors, Italy (1978).

"Improvements in the Sensitivity of Secondary Ion Mass Spectrometry - Cs Ion Bombardment and Negative Ion Spectrometry," R. J, Blattner and C. A. Evans, Jr., Thin Solid Films 53, 39 (1978).

"Recent Advances and Applications of SIMS to Electronic Materials," C. A, Evatts, Jr., Proceedings of the Microelectronics Measurement Technology Seminar, (). D. Trapp, ed., San Jose, Benwill Publishing Corp. (1979).

"STEM Analysis of Grain Boundaries in Cemented Carbides," N. K. Sharma, I. D. Ward, H. L. Fraser and W. S. Wiliiams, Journal of the American Ceramic Society 63, 194 (1980).

"Anomalous Baron Profiles Produced by BF2 Implantation into Silicon," T. W. Sigmon, V. R. Deline, C. A. Evans, Jr. and W. M. Katz, Journal of the Electrochemical Society 127, 981 (1980).

"Alloying of Au Layers and Redistribution of Cr in GaAs," T. J. Magee, J. Peng, J. D. Hong, V. R. Deline and C. A. Evans, Jr., Applied Physics Letters 35. 615 {1979}.

"Back Surface Gettering and Cr Outdiffusion in VPE GaAs Layers," T. J. Magee, J. Peng, J. D. Hang, C. A_ Evans, Jr., V. R Deline and R. M. Malbon, Applied Physics Letters 35 277 (1979).

"Thermal Annealing Study of the AutTi-W Metallization of Silicon," J. E. Baker, R J. Blattner, 5. Nadel, C. A. Evans, Jr. and R S. Nawicki, Thin Solid Films b~,9 53 (1980).

"Gettering of Cr by Residual Damage and Encapsulant Stress in Ion Implanted Semi-Insulating GaAs," V. R Deline, C. A. Evans, Jr., T. W. Sigmon and A. Lidow, Applied Physics Letters 35,291 (1979).

"Transient Pitting During Film Growth on Aluminum at 1000 mV vs. SCE," J. Zahavi, I. D. Ward and M. Metzger, Journal of the Electrochemical Society 125.574 (1978).

"Chromium Concentrations, Depth Distributions, and Diffusion Coefficient in Bulk and Epitaxial GaAs and in Si;' R G. Wilson, P. K. Vasudev, D. M. Jamba, C. A. Evans, Jr. and V. R Deline, Applied Physics Letters 36 215 (1980).

"Gettering of Cr in GaAs by Back Surface Mechanical Damage," T. J. Magee, M, Peng, J. D. Hong, C. A. Evans, Jr. and V. R Deline, Physica Status Solidi (A) 55, 169 (1979).

"Back Surface Gettering of Au in GaAs," T. J. Magee, J. Pang, J. D. Hong, W. Katz, and C. A. Evans, Jr., Physica Status Solidi (A) 55.161 (1979).

"Towards a Universal Model far Sputtered Ion Emission," P. Williams, W. Katz and C. A. Evans, Jr., Nuclear Instruments and Methods 168, 363 (1980).

"CW Laser Annealing of Boron and Arsenic-Implanted Silicon; Electrical Properties, Crystalline Structure and Limitations," A. Gat, T. J. Magee, J. Peng, V. R. Deline and C. A. Evans, Jr., Solid State Technology 22. 59 (1979).

"Direct Lateral and In-Depth Distnbutional Analysis for Ionic Contaminants in Semiconductor Devices Using Secondary Ion Mass Spectrometry," C. A. Evans, Jr. and V. R- Deline, Proceedings of the Conference on Advanced Techniques in Failure Analysis, Los Angeles, Califomia (1979).

"Reply to 'Comment on "A Unified Explanation for Secondary Ion Yields" and "Mechanism of the SIMS Matrix Effect,""' P. Williams, V. R. Deline, C. A. Evans, Jr. and W. Katz, Journal of Applied Physics 52 530 (1981).

"Effects of Cr Redistribution on Electrical Characteristics of Ion-Implanted Semi-Insulating GaAs," P. M. Asbeck, J. Tandon, B. M. Welch, C_ A. Evans, Jr. and V. R DeIine, IEEE Electron Device Letters 1, 35 (1980).

"A Correlation of the Average Sample Mass and the Sputtering Yield in SIMS," W. Katz, P. Williams and C. A. Evans, Jr., Surface and Interface Analysis 2 120 (1980).

"Redistribution of Implanted Zn in InP After Q-Switched Laser Annealing and the Related Specific Contact Resistance," Z. L. Liau, N. L. DeMeo, J. P. Donelly, C. G. Hopkins, J. C. Norberg, C. A. Evans, Jr. and J. P_ Lorenzo, Materials Research Symposium, Boston, MA (1979).

"Trace Level Microanalysis of Carbon and Oxygen in Electronic Materials Using Cs Bombardment SIMS," V. R Deline, R. J. Blattner and C. A. Evans, Jr., Microbeam Analytical Society, Reno, NV (1980).

"Quantitative Aspects of Secondary Ion Mass Spectrometry," V. R. Deline (1978) (thesis).

"High-Performance Secondary Ion Mass Spectrometry," R J. Blattner and C. A. Evans, Jr., SEM, Inc., Chicago, Illinois, O. Jahari, ed. (1980).

"Chromium and Tellurium Redistribution in GaAs and AIp.3Gap.7As Grown by Molecular Beam Epitaxy;" H. Morkoc, C. G. Hopkins, C. A. Evans, Jr. and A. Y. Cho, Journal of Applied Physics 51. S9$6 (19$O).

"Damage Gettering of Cr During the Annealing of Cr and S Implants in Semi-Insulating, GaAs," P. K. Vasudev, R G. Wilson and C. A. Evaas, Jr., Applied Physics Letters 37, 308 (1980)

"Low Temperature Redistribution of Cr in Boron Implanted GaAs in the Absence of Encapsulant Stress," T. J. Magee, K. S. Lee, R. Onnond, C. A. Evans, Jr., R. J. Blattner and C. G. Hopkins, Applied Physics Letters 37.635 (1980).

"Incorporation of Baron During the Growth of GaAs Single-Crystals," C. G. Hopkins, V. R Deline, R J. Blatmer, C. A. Evans, Jr. and T. J. Magee, Applied Physics Letters 36, 989 (1980).

"Redistribution of S and Cr in Thermally Annealed, Sulphur Implanted, Semi-Insulating GaAs," C. A. Evans, Jr., C. G. Hopkits, J. C. Norberg, V. R Deline, R. I. Blattner, R. G. Wilson, D. M. Jamba and Y. S. Park, Semi-Insulating BIN Materials Conference, Nottingham, England (1980).

"Annealing of Damage and Redistribution of Cr in Boron Implanted Si3N4 Capped GaAs," T. J. Magee, K. S. Lee, R Ormond, R. J. Blattner and C. A. Evans, Jr., Applied Physics Letters 37, 447 (1980).

"Low Temperature Gettering of Cr in GaAs," T. J. Magee, J. Hung, V. R Deline and C. A. Evans, Jr., Applied Physics Letters 37. 53 (1980).

"An Introduction to Scanning Auger Microscopy and its Applications," R J. Blattner, Micrastructurai Science, vol. 8, Stevens, VanderVoort, McCall, eds., ElsevierNorth-Holland (1980)

"Surface. Studies of Electrically Conducting CsSnzls," S. L. Suib, G. D. Siucky, R J. Blattner and P. F. Weller, Journal of Solid State Chemistry 31 387 (1480).

"Applications of Auger Depth Profiling to Problems in Silicon Technology," R J. Blatmer, Proceedings of the Microelectronics Measurement Technology Seminar, San Jose, CA, pp. 185-202 (1979).

"Auger Profile Study of the Influence of Lattice Mismatch on the LPE InGaAsP-InP Hetemjunction Interface," M. Feng, L. W. Cook, M. M. Tashima, G. E. Stillman and R. J. Blattner, Applied Physics Letters 34. 697 (1979).

"Auger Spectroscopy Studies of Natural and Synthetic Zeolites, I. Surface Compositions," S. L. Suib, G. D. Stucky and R J. Blatmer, Journal of Catalysis 65 174 (1980).

"Auger Studies of 7.eolites, II. Ion Migration in Rare Earth and Transition Metal Exchanged Zealites," S. L. Suib, G. D. Stucky and R J. Blattner, Journal of Catalysis 65. 179 (1980).

"Chemical Analysis and Structural Characterization of Transition Metal Disulfide Intercalates," S. L. Suih, L. R. Faulkner, G. D. Stucky and R J. Blattner, Analytical Chemistry 51, 1060 (1974).

"Amorphous Semiconducting Films Prepared by Plasma-Decomposition of H2S-N2-NH3," V. Smid, H. Fritzsche and R J. Blattner, Philosophical Magazine B41, 363 (1980).

"Factors Influencing Secondary Ion Yields," V. R Deline, Proceedings of SIMS II, Stanford, CA (1979).

"Glow Discharge Optical Spectroscopy Measurement of Dopant Concentrations in a Si:H," J. C. Zesch, R A. Lujan and V. R. Deline, Journal of Non-Crystalline Solids 35-36, 273-277 (1980).

"Physicochemical Characterization of Lead in Urban Dusts. A Microanalytical Approach to Lead Tracing,' R W. Linton, D. F. S. Natusch, R L. Solomon and C. A. Evans, Jr., Environmental Science and Technology 14, 159 (1980).

"Interface Grading in InGaAsP LPE Hetemstruchmes," L. W. Cook, M. Feng, M. M. Tashima, G. E. Stillman, and R. J. Blattner, Applied Physics Letters 37, 173 (1980).

"Overview of Ion and Electron Beam Techniques for the Analysis of Electronic Materials," C. A. Evans, Jr. and I. D. Ward, Proceedings of the Microelectronics Measurement Technology Seminar, San Jose, CA, pp. 10-24 (1980).

"Chromium Redistribution During Thermal Annealing of Semi-Insulating GaAs as a Function of Encapsulant and Implant Fluence," P. K. Vasudev, R G. Wilson and C. A. Evans, Jr., Applied Physics Letters 36, 837 (1980).

"Scanning Auger Microscopy, Historical Perspective and Present Trends," R J. Blattner, Proceedings of the Microelectronics Measurement Technology Seminar, San Jose, CA, pp. 246-269 (1980).

"Degradation of Plasma-Sprayed Alumina on Metal Substrates in Physiological Media," R. J. Blattrier, J. L. Drummond, S. D. Brown and M. R Sunon, Journal of the American Ceramic Society 64, C109 (1981).

"Chromium Getxering in GaAs by Oxygen Implantation," P. M. Favennec, M. Gauneau, H. L'Haridon, B. Deveaud, C. A. Evans, Jr. and R. J. Blattner, Applied Physics Letters 39,271 (1981).

"Redistribution of Iran Implanted into Gallium Arsenide upon Annealing and its Saturation Density," R G. Wilson and C. A. Evans, Jr., Institute of Physics Conference, Series No. 56: Chapter 8, Gallium Arsenide and Related Compounds (1980).

"Effect of Power Level in CW Laser Annealing of Polycrystalline SiGcon," L. Gerzberg, A. Gat, K. F. Lee, J. F. Gibbons, J. Peng, T. J. Magee, V. R. Deline and C. A. Evans, Jr., Journal of the Electrochemical Society (accepted 1981).

"Growth Kinetics of Pd2Si from Evaporated and Sputter-Deposited Films," N. W. Cheung, M.-A. Nicolet, M. Wittmer and C. A. Evans, Jr., Thin Solid Films 79, 51(1981).

"Ion Channeling in GaAs: St 5, Se and Te," R. G. Wilson and V. R. Deline, Applied Physics Letters 37, 793 (1980).

"Ion-Implanted Se in GaAs," A. Lidow, J. F. Gibbons, V. R Detine and C_ A. Evans, Jr., Journal of Applied Physics 51. 4134 (19$0).

"Geitering of Mobile Oxygen and Defect Stability within Back Surface Damage Regions in Si," T. J. Magee, C. Leung, H. Kawayoshi, B. K. Furtttan and C. A. Evans, Jr., Applied Physics Letters 38, 891 (1981).

"Surface Analysis lnstcumentatian for the Semiconductor Industry: A 1980 Perspective," C. A. Evans, h. and R J. Blattner, Semiconductor International 3 109 (1980).

"Front Surface Control of Cr Redistribution and Formation of Stable Cr Depletion Channels in GaAs," T. J. Magee, R. D. Otmond, C. A. Evans, Jr., R J. Blattner, R M. Malbon, D. S. Day and R. Sanlearan, Applied Physics Letters 38. 559 (1981).

"Ion Implantation in L'NbOg," R G. Wilson, D. M. Jamba and D. A. Betts, Proceedings of the Materials Research Society, Annual Meeting, Boston, Massachusetts, Volume 24 (1984).

"A Correlation of Atomic and Electrical Measurements of Gr and Residual Donors in Thermally Processed Semi-Insulating GaAs," C. A. Evans, Jr., V. R Deline, P. K. Vasudev and R G. Wilson, GaAs IC Symposium, Las Vegas, Nevada (1981).

"Low Temperature Redistribution and Gettering of Oxygen in Silicon," T. J. Magee, C. Leung, H. Kawayoshi, 8. K. Furman, C. G. Hopkins and C. A. Evans, Jr., Journal of Applied Physics 52, 5392 (1981).

"A. Modulation Technique for Discrimination Against Ion Induced Auger Electrons in Micro-Area AES," I. D. Ward and R J. Blattner, Surface and Interface Analysis 3,184 (1981).

"Deuterium at the Si-Si02 Interface Detected by Secondary Ion Mass Spectrometry," N. M. Johnson, M. D. Moyer, D. K. BiegeBen, V. R. Deline and C. A. Evans, Jr., Applied Physics Letters 38, 995 (1981).

"Redistribution of Oxygen Within Damage Regions of Boron-Implanted Silicon," T. J. Magee, C. Leung, H. Kawayoshi, B. K. Furman, C. A. Evans, Jr. and D. S. Day, Applied Physics Letters 39,260 (1981).

"Enhanced Diffusion and Precipitation in Cu: In Alloys Due to Low Energy Ion Bombardment," L. Rivaud, I. D. Ward, A. H. Elboukhy and 7. E. Greene, Surface Science 102,610 (1981).

"A Direct Imaging Laser Mass Analyzer," B. K. Furman and C. A. Evans, Jr_, Microbeam Analysis, (I981).

"Anomalous Local Oxidation and Recrystalli7ation of Vacuum-Deposited Amorphous Silicon by CW Laser Irradiation," S. Minagawa, J. F. Gibbons, T. J. Magee, R Ormond, R J. Blattner and B. K. Furman, Journal of the Electrochemical Society 129, 888 (1982).

"Sulfur Doping in A10.4Gap.6As," J. C. Norberg, P. J. Anthony, J. L. Zilko, V. Swaminathan, N. E. Schumaker, W. R Waguer, Applied Physics Letters 38, 434 (1981).

"The Role of Stabilized Back-Surface Damage in Controlling Internal Si4x Nucleation and Denudation Zones in Si," T. J. Magee, C. Leung, H. Kawayoshi, B. K. Furman and C. A. Evans, Jr., Applied Physics Letters 39, 631 (i981).

"Thermal Redistribution of Oxygen during Solid Phase Regrowth of As-Implanted Amorphized Si," T. J. Magee, G. Leung, H. Kawayoshi, R. Ormond, D. S. Day, B. K. Furman and C. A. Evans, Jr., Applied Physics Letters 39,413 (1981).

"Recoil Oxygen Implants and Thermal Redistribution of Oxygen in Through-Oxide Arsenic-Implanted Si," T. J. Magee, C. Leung, H. Kawayoshi, L. J. Palkuti, B. K. Furman, C. A. Evans, Jr., L. A. Christel, J. F. Gibbons and D. S. Day, Applied Physics Letters 39, 564 (19$1).

"Stoichiometric Disturbances in Ion-Implanted GaAs and Redistribution of Cr during Annealing," T. J. Magee, H. Kawayoshi, R. D. Ormond, L. A. Christel, J. F. Gibbons, C. G. Hopkins, C. A. Evans, Jr. and D. S. Day, Applied Physics Letters 39, 906 (1981)_

"Depth Profiling by SIMS-Depth Resolution, Dynamic Range and Sensitivity," C. W. Magee, R E. Honig and G. A. Evans, Jr., SIMS III, Budapest, Hungary, September (1981).

"New Results on the Rapid Diffusion and Gettering of Oxygen in CZ Silicon," C. A. Evans & Associates, (news release) Semiconductor International, p. 11, May (198 1).

"Solid Phase Reduction of Si02 in the Presence of an Al Layer," R. J. Blattner and A. J. Braundmeier, Jr., Journal of Vacuum Science and Technology 20. 320 (I982).

"Thermal Diffusion of Tin in GaAs from a Spin-on Sn021SiOZ Source," Y. I. Nissim, J. F. Gibbons, C. A. Evans, Jr., V. R. Deline and J. C. Norberg, Applied Physics Letters 3,99(1980).

"A Combined Direct Imaging Laser Ionization Secondary Ionization Mass Spectrometer," B. K. Furman and C. A. Evans, Jr., 5IMS III, Budapest, Hungary, September (198 1).

"Rapid Diffusion and Gettering Studies of Bulk Oxygen in Silicon by CsISIMS," C. A. Evans, Jr., B. K. Furman and T. J. Magee, SIMS III, Budapest, Hungary, September (1981).

"Secondary Ion Images of Impurities at Grain Boundaries in Polycrystalline Silicon," G. A. Pollock, V. A. Deline and B. K. Furman, Proceedings of the Materials Research Society Symposium, Boston (1981).

"Manganese Incorporation Behavior in Molecular Beam Epitaxial GaAs," D. DeSimone, G. E. C. Wood and C. A. Evans, Jr., Journal of Applied Physics 53. 4938 (1982).

"Reply to 'Comment on "GetOering of Mobile Oxygen and Defect Stability Within Back-Surface Damage Regions in Si,'"" T. J. Magee and B. K. Furman, Journal of Applied Physics 53, 1227 (1982).

"On the Comparison of Transmission Electron Microscopy and Channeled Rutherford Backscattering Techniques to Evaluate the Multilayer Subsurface Damage Structures," D. K. Sadana, M. D. Strathman, J, Washburn and G. R Booker, Applied Physics Letters 37,234 (1980).

"Effect on Electrical Properties of Segregation of Implanted P+ at Defect Sites in Si," D. K. Sadana, M. D. Strathman, J. Washburn, C. W. Magee, M. Maenpaa and G. R Booker, Applied Physics Letters 37, 615 (1980).

"Transmission Electron Microscopy and Rutherford Backscattering Studies of Different Damage Structures in P+ Implanted Si," D. K. Sadana, M. D. Strathman, J. Washburn and G. R Booker, Journal of Applied Physics 51. 5718 (1980).

"Effects of Damage-Impurity Interaction on Electrical Properties of Set-implanted GaAs," D. K. Sadana, J. Washburn, M. D. Strathman, G. R. Booker and M. H. Badaw% Proceedings of Defects in Semiconductors, Boston, MA, November (1980).

"Reaction Between Two 6L.i at Rest to Give Three Alpha Particles," E. Norbeck, C. R. Cheq M. D. Strathman and D. A. Fax, Physical Review C, 23 2557 (1981).

"Arsenic Implants Through SiOZ/Si; A Transmission Electron Microscopy, Rutherford Backscattering and MOS Device Characteristic Study," D. K. Sadana, J. Washburn, M. D. St:athman, M. Current and M. Maenpaa. Proceedings of Royal Microscopy Meeting, Oxford, U. K, April (19$1).

"Magnetic Properties of Some RAuGa Intermetallic Compounds," L. R Sill and C. J. Hitzman, Journal of Applied Physics 52, 2061 (1981).

"Performance of a Segmented Calorimeter," L. Cormell, C. J. Hitanan, A. Hamilton, C. Mehanian, R Ruiand, M. Takashima, G. Theodosiou, J. Winterburg, B. T. Yost, M. Arenton, W. R. Ditzler, M. Dris, M. Harrison, A. Kanofsky and H. F. Chen, IEEE Nuclear Science Symposium, San Francisco, CA, October (1981).

"The Performance of a Laser-Induced Ion Mass Analyser System for Bulk Samples," T. Dingle, H. W. Griffiths, J. C. Ruckman and C. A. Evans, Jr., Proceedings of Microbeam Analytical Society, Washington, D. C., p. 365 (1982).

"Si Incorporation in AIXGaI-xAs Grown by Molecular Beam Epitaxy," T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Markoc, C. G. Hopkins and C. A. Evans, Jr., Journal of Vacuum Science and Technology 21, 957 (1982).

"Summary Abstract: Angle-Resolved SIMS Studies of Oz and CO Chemisoiption on Ni3Fe (111)," R J. Bleiler, A. C. Diebold and N. Winograd, Journal of Vacuum Science and Technology A1, 1230 (1983).

"Magnetic Properties of RAIGa Compounds," L. R. Sill and C. J. Hit-cman, Journal of Applied Physics 53, 2448 (1982).

"Applications of a Combined Direct Imaging Laser Ionization-Secondary Ionization Mass Spectrometer to Materials Analysis," B. K. Furman and C. A. Evans, Jr., Proceedings of Micrabeam Analytical Society, Washington, D. C., p. 222 (1982).

"Quantitative Image Acquisition System for Ion Microscopy Based on the Resistive Anode Encoder," R W. Odom, B. K. Furman, C. A. Evans, Jr., C. E. Bryson, W. A, Petersen, M. A. Kelly and D. H. Wayne, Analytical Chemistry S5, 574 (1993).

"Microstructural Study of Hot-Deformed Cemented Carbides," R J. Gottschalt, W. S. Williams and I. D. Ward, Philosophical Magazine A, 41.1 (1980).

"Native Oxide Studies on the Surface of Semiconductors," G. Many, M. Somogyi, C. A. Evaos, Jr., T. Nagy and J. Gyulai, Proceedings 7th International Vacuum Congress and 3rd International Conference an Solid Surfaces, Vienna, Austria, p. 571 (1977).

"Data Acquisition and Instrument Control System for Ian Flight Time Measurements in Mass Spectrometry," J. T. Stalts, C. A. Myerholtz, B. H. Newcame, C. G. Enke and J. F. Holland, Review of Scientific Instruments 56 2267 (1985).

"Comment an 'Existence of H2-, a Relatively Long-Lived Doubly Charged Negative Atomic Hydrogen Ion,"' R W. Odam and M. Anbar, Journal of Chemical Physics 73 4709 (1980).

"Measurement of the Dijet Cross Section in 400-GeV pp Collisions," Arenton ... C. J. Hitzman ... Thompson, Physical Review Letters 53, 1988 (1984).

"Anomolous Redistribution of Beryllium in GaAs Grown by Molecular Beam Epitaxy," P. Enquist, G. W. Wicks, L. F. Eastman and C. Hitzman, Journal of Applied Physics 58,4130 (1985).

"SIMS Studies on Anomalous Behavior of Phosphorus and Other Implants in Silicon," P. K. Chu, D. Zhu and G. H. Morrison, Radiation Effects 61, 201 (1982).

"Solid-State Standard Addition Method in Secondary Ion Mass Spectrometry for improvement of Detection Limits," P. K. Cha and G. H. Morrison, Analytical Chemistry 54,2111 (1982).

"Secondary Ion Mass Spectrometric Image Depth Profile Analysis of Thin Layers," P. K. Chu, W. C. Harris, Jr. and G. H. Morrison, Analytical Chemistry 5~4 2208 (I982).

"Analysis of Al in Silicon on Sapphire Films and Bulk Silicon," G. D. Robertson, Jr., P. K. Vasudev, R. G. Wilson and V. R Deline, Applications of Surface Science 14,128 (1982).

"Evidence for Jets from a Transverse Energy Triggered Calorimeter Experiment at Fennilab," M. Arenton, ...C. J. Hitznan, ..., XXI High Energy Conference, Paris, France, July (1982).

"Depth Distributions and Range Parameters for He Implanted in Si and GaAs," R G. Wilson, V. R Deline and C_ G. Hopldns, Applied Physics Letters 41. 929 (1982).

"The Properties of Si in AIXGaI_X As Grown by Molecular Beam Epitaxy," R Fischer, C. G. Hopkins, C. A. Evans, Jr., T. J. Drummond, W. G. Lyons, J. Klem, C. Colvard and H. Morkoc, International Symposium on GaAs and Related Compounds, Albuquerque, New Mexico, September (1982).

"Spatially Correlated Redistribution of Mn and Ge in In !_XGaXAS MBE Layers," E. Silberg, T. Y. Chang, E. A. Caridi, C. A. Evans, Jr. and C. J. Hitzman, International Symposium on GaAs and Related Compounds, Albuquerque, New Mexico, September (1982).

"MeV Ion Beam Analysis for Quality Control," M. D. Strathman, Proceedings of ISTFA Conference, San Jose, Caiifornie, October (1982).

"A New Type of Charging Belt for Van De Graaff Accelerators," M. D. Strathman and E. Norbeck, 7th Conference on the Application of Accelerators in Research and Industry, North Texas State University, Denton, Texas, November (1982).

"Manganese and Germanium Redistribution in Inps3Gap.47As Grown by Molecular Beam Epitaxy," E. Silberg, T. Y. Chang, E. A. Caridi, C. A. Evans, Jr. and C. J. Hitunan, Journal of Vacuum Science and Technology B1. 178 (1983).

"High -Power Neutral Deuterium Beam Species Measurement by Neutralizer Fusion Product Analysis," R R Smith and M. D. Strathman, Review of Scientific Instruments 53, 1513 (1982).

"Diffusion of Tellurium Dopant in Silicon," E. Janzen, H. G. Grimmeiss, A. Lodding, C. Deline, Journal of Applied Physics 53. 7367 (1982).

"Unanneated and Annealed Depth Distributions of Mercury Implanted into Silicon," R. G. Wilson, D. M. Jamba, C. G. Hopkins and J. C. Norberg, Journal of Applied Physics SS, 327 (1984).

"A Study of Substrate Effects on Planar Doped Structures in Gallium Arsenide Grown by Molecular Beam Epitaacy," S. C. Paimateer, P. A. Maki, M. A. Hollis, L. F. Eashnan, C. 3. Hitunan and i. D. Ward, International Symposium on GaAs and Related Compounds, Albuquerque, New Mexico, September (1982).

"Electron and Iron Concentration in Semi -Insulating Indium Phosphide," C. R Zeisse, G. A. Antypas and C. G. Hopkins, Journal of Crystal Growth 6-,4 217 (1983).

"Redistribution of Chromium Under Annealed Sulfur Implants into Chromium-Doped GaAs," R- G. Wilson, C. A. Evans, Jr., J. C. Norberg, C. G. Hopkias and Y. S. Park, Journal of Applied Physics 54, 6968 (19$3).

"Depth Distributions of Sulfur-Implanted into GaAs as a Function of Ion EneW, Ion Fiuence, and Annealing Temperature and Encapsulation," R G. Wilson, D. M. Jamba, V. R. Deline, C. A. Evans, Jr. and Y. S. Park, Journal of Applied Physics 54,3949 (1983).

"Pulsed Field Desorption Mass Spectrometry: A Technique for Investigating Field Desorption Ion Formaion Mechanisms," R W. Odam, S. E. Huttrill, 3r., R. H. Fieming, M. Rossi, L. N. Gceller and W. Gohl, Internationat Journal of Mass Spectrometry and Ion Physics 49, 319 (1983).

"Microanalyticai Characterization of Semiconductor Device Contamination Using the Laser Microprobe Mass Analysis Technique," R W. Odom and C. A. Evans, Jr., Proceedings of ISTFA Conference, Los Angeles, California, October (1983).

"Application of Heavy-Ion Backscattering Spectrometry to the Analysis of Semiconductor Materials," J. M. Jaklevic, K. M. Yu, M. D. Strathman and E. E_ Halter, LBL Report #16191 (1983).

"Microanalytical Characterization of Materials Using the Laser Microprobe Mass Analysis Technique: Semiconductor Device Contamination and Trace Component Analysis," C. J. Hitzman and R W. Odom, Pittsburgh Conference (1984).

"Microanalysis of Bulk Samples by Laser-Induced Ion Mass Analysis," C. A. Evans, Jr., B. W. Griffiths, T. Dingle, M. J. Southan and A. J. Ninham, Proceedings of Microbeam Analytical Society, Phoenix, Arizona, August (1983).

"Analysis Methods Complement Each Other in Surface Studies," I. D. Ward and M. D. Strathman, Industrial Research and Development, p. 154, September (1983).

"Correlation Among Secondary Ion Mass Spectrometry, Cross-Section Transmission Electron Microscopy, and Rutherford Backscattering Analyses for Defect Density and Depth Distribution Determination," R G. Wilson, D. K. Sadana, T. W. Sigmon and C. A. Evans, Jr., Applied Physics Letters 43, 549 (1993).

"Annealing of Hgl_XCdxTe: Hg Loss Rates and Annealing of Ion Implantation," K. C. Dimiduk, W G. Opyd, J. F. Gibbons, T. W. Sigmon, T. J. Magee and R D. Ormand, Journal of Vacuum Science and Technology At, 1661 (1983).

"Fun with Panurge: High Mass Resolution Ion Microprobe Measurements of Mg in Allende Inclusions," J. C Huneke, J. T. Armstrong and G. J. Wasserburg, Geochimica et Cosmochimica Acta 47,1635 {19$3}.

"Poly-C Van De GraaffBelts," E. Norbeck and M. D. Strathma,n, Nuclear Instruments and Methods 215, 7 (1983).

"Grain Growth in A1 Alloy Conductors as a Result of Rapid Annealing," J. M. Towner, E. P. Van De Ven and C. G. Hopkirs, Applied Physics Letters 44, 198 (1984).

"Megavolt Boron and Arsenic Implantation into Silicon," P. F. Byrne, N. W. Cheung, S. Tam, C. Hu, Y. C. Shih, J. Washburn and M. D. Strathman, Proceedings of Materials Research Society Meeting, Boston, MA, November (1983).

"The Kinetics of Platinum Silicide Formation Using CW Lamp Annealing," C. G. Hopkins, S. M. Baumann and R J. Blattner, Proceedings of Materials Research Society Meeting, Boston, MA, November (1983).

"RBS Technique Exposes Surface Properties of Electronic Materials," C. A. Evans, Jr. and M. D. Strathman, Industrial Research and Development, p. 99, December (1983).

"Rapid Thermal Annealing of Si-Implanted GaAs," D. H. Rosenblatt, W. R. Hitchens, S. Shatas, A. Gat and D_ A. Betts, Proceedings of Materials Research Society Meeting, Boston, MA, Volume 23, (1984).

"Channeling of Aluminum in Silicon," R G. Wilson and C. G. Hopkins, Journal of Applied Physics 57, 4517 (1985).

"Effects of Donor Impurities on the Redistribution of Mn Acceptors in Inl XGaXAs," C. J. Hitznan, E. Silberg, T. Y. Chang and E. A. Caridi, Proceedings of SIMS IV, Osaka, Japan, November (1983).

"Eruptive History of the Rhyolitic Kane Springs Wash Volcanic Center, Nevada," S. W. Novak, Journal of Geophysical Research 89B. 9603 (1984).

"Eruption Age of a 100,000-Year-Old Basalt From 4OAr-39Ar Analysis of Partially Degassed Xenoliths," A. R Gillespie, J. C. Huneke and G. J. Wasserburg, Journal of Geophysical Research 89, 1033 (1984).

"A Comparison of Camera-Based and Quantized Detectors for Image Processing on an Ion Microscope," R. W. Odom, D. H. Wayne and C. A. Evans, Jr., Proceedings of SIMS IV, Osaka, Japan, November (1983).

"Ion Scattering Spectrometry in a Commercial Scanning Auger Microprobe," Z. Liu and D. A. Reed, Review of Scientific Instruments 5~15 542 (1984).

"Properties of Planar Magnetron Cosputtered Silicide Films," J. Stimmell and M. D. Strathman, Journal of Vacuum Science and Technology B5, 1750 (1987).

"Epitaxial Regrowth of Silicon Implanted with Argon and Boron," M. I?eifino, A. Milgram and M. D. Strathman, Applied Physics Letters 44, 594 (1984).

"Implantation of Dopants into Indium Phosphide," C. R Zeisse, R. G. Wilson and C. G. Hapkins, Journal of Applied Physics 57, 1656 (1985).

"Recent Advances in the Use of Laser Ionization Mass Spectrometry (LIMS) for Failure Analysis," C. J. Hitzanan and R. W. Odom, Proceedings of ISTFA, October (1984).

"Applications of Rutherford Backscattering Spectrometry for the Semiconductor Industry," C. A. Evans, Jr. and M. D. Slrat}unan, Proceedings of ISTFA, October (i9&t).

"Recent Advances and Applications of SIMS to Electronic Materials," C. A. Evans, Jr., Proceedings of the International Conference on Solid State Devices and Materials, Kobe, Japan (1984).

"Micromalysis of Inorganic Materials by Laser Ionization Mass Spectrometry (LIMS)," R W. Odom, C. J. Hitunan and S. E. Buttrill, Jr., Proceedings of American Society for Mass Spectrometry Conference, San Antonio, Texas, May (1984).

"Laser Microprobe Mass Analysis of Materials;" R W. Odom and C. J. Hitzman, SPIE 458, Applications of Lasers to Industrial Chemistry (1984).

"Quantitative Analysis of Boron and Phosphorus in Borophasphosilicate Glass by Secondary Ion Mass Spectrometry," P. K. Chu and S. L. Cube, Analytical Chemistry 57. 1071 (1985).

"Preliminary Evaluation of Thermal Desorptian-Gas Chromatographic Analysis of Airborne Particulate Matter on Dichotomous Filters," R. L. Crouch, R A. Hawley Fedder, M. L. Parsons and F. 9V. Karasek, Journal of Chromatography 303. 53 (1984)

"Rutherford Backscattering in an Industrial Environment," M. D. Strathman, Proceedings of the Conference on Applications of Accelerators in Research and Industry, November (1984).

"Laser Ionization Mass Spectrometry of Materials," C. J. Hitzman and R- W. Odom, Proceedings of International Conference an Lasers, San Francisco, CA, November (1984).

"Sulfur Segregation on Nickel," T. Miyahara, K. Stolt, D. A. Reed and H, K. Birnbaum, Scripta Metallurgica 19.117 (1985).

"Pyrro[3,4-b]quinoxalines. Stable Analogs of Benzo[t]isoindok," R. A. Anderson and R H. Fleming, Tetrahedron Letters 20. 1581 (1969).

"Allene-Olefin and Allene-Allene Cycloadditions: Methylenecyclobutane and 1,2-Dimethyknecyclobutane Degenerate Rearrangements," J. E. Baldwin and R. H. Fleming, Fortschritte der chemischen Forschung 15, 281 {1970}.

"Antarafacial Allylic Participation in a Thermal 1,3-Sigmatropic Carbon Migration," J. E. Baldwin and R H. Fleming, Journal of the American Chemical Society 94 2140 (1972).

"Thermal Cycloaddition of Cyanoallene and 1-(N-Morpholino)cyclohexene," J. E. Baidwin, R. H. Fleming and D. M. Simmons, Journal of Organic Chemistry 37. 3963 (1972).

"'Ihermisches Verhalten von AIIyloxy-carhenen," R. W. Hoffmann, R Hirsch, R. H. Fleming and M. T. Reetz, Chemische Berichte 105. 3532 (1972).

"Thermal Rearrangements of Methylenecyclobutanes. Kinetics of Equilibration of (E)- and (Z)-1-Ethylidene-2-methylcyclobutane and cis-and V=-l-Methyleno-2,4dimethylcyelobutane," J. E. Baldwin and R H. Fleming, Journal of the American Chemical Society 95 5249 (1973).

"Thermal Rearrangements of Methylenecyclobutanes. Degenerate Rearrangement of (Z)- 1-Ethylidene-2-metltylcyclobutane with Antarafacial Allylic Participation," J. E. Baldwin and R H. Fleming, Journal of the American Chemical Society 95 5256 (1973).

"Thermal Rearrangements of Methylenecyclobutanes. Degenerate Rearrangement of Optically Active 1-{Z}-(1-Deuterioethylidene)-2-methyl-trans-3,4,4trideuteriocyclobu-tane," J. E. Baldwin and R H. Fleming, Journal of the American Chemical Society 95, 5261 (1973).

"Mechanisms of Photochemical Reactions in Solution, LXXXI. Photocyclization of 1,8-Divinylnaphthalene. A New Method for Determining the Multiplicity of Excited State Intermediates," R. H. Fleming, F. H. Quina and G. S. Hammond, Journal of the American Chemical Society 96, 7738 (1974).

"A Triangle Wave Generator for Electrochemical Applications," W. E. Britton, R H. Fleming, G. S. Hammond and W. Nichparcmico, Journal of Chemical Education 5,68(1976).

"Flash Kinetic Spectroscopy of ReZClg2- and Re2BrgZ-," R H. Fleming, G. L. Geof&ey, H. B. Gray, A. Gupta, G. S. Hammond, D. S. Kliger and V. M. Miskowski, Journal of the American Chemical Society 98 48(1976).

"Diels-Alder Reactions of 2H-Thiopyran," R H. Fleming and B. M. Murray, Journal of Organic Chemistry 4_,4 2280 (1979).

"Bis(2,2'-(alkylimino)diethanolato)cobalt (III) Chelates. Characterization of Hydrolytic Stability and Interactions with Acetylcholinesterase," R A. Kenley, R H. Fleming, R A. Howd and R M. Lane, Inorganic Chemistry 22, 1247 (1983).

"Reactive Intermediate in the Alkali-Carbonate-Catalysed Gasification of Coal Char," B. J. Wood, R. H. Fleming and H. Wise, Fuel 63, 1600 (1984).

"Cobalt (lII) Complex Catalyzed Hydrolysis of Phosphorous Esters," R. A. Kenley, R. H. Fleming, R. M. Laine, D. S. Tse and J. S. Winterle, Inorganic Chemistry 23.1870 (1984).

"A Comparative Study of SIMS Depth Profiling of Boron in Silicon," J. B. Clegg, A. E. Morgan, H. A. M. de Grefte, F. Simondet, A. Huber, G. Blackmare, M. G. Dowsett, D. E. Sykes, C. W. Magee and V. R Deline, Surface and Interface Analysis 6 162 (1984).

"Surface Microanalytical Studies of Nitrogen Ion-Implanted Steel," C. G. Dodd, G. P. Meeker, S. M. Baumann, J. C. Norberg and K. O. Legg, Nuclear Instruments and Methods in Physics Research B7/8. 219 (1985).

"Isotopic Measurements with a Reflection Geometry Laser Ionization Mass Spectrometer (LIMS)," F. Radicati di Brozolo and R W. 4dom. Microbeam Analysis -1985, p.322 (1985).

"The Influence of Ion Implantation on Solid Phase Epitaxy of Amorphous Silicon Deposited by LPCVD," Wang Y. Y., N. W. Cheung, D. K. Sadana, C. Jou and M. D. Strathman, SPIE 530, Advanced Applications of Ion Implantation (1985).

"Materials Characterization Tools for Advanced Ion Beam Processes," M. D. Strathman. SPIE 530, Advanced Applications of Ion Implantation (1985).

"Effect of Furnace Pteanneal and Rapid Thermal Annealing on Arsenic-Implanted Silicon," R Kwor, D. L. Kwong, C. C. Ho, B. Y. Tsaur and S. Baumaaa, Journal of the Electrochemical Society 132, 1201 (1985).

"Effects of High Levels of Be in GaAs by MBE," P. Enquist, L. M. Lunardi, G. W. Wicks, L. F. Eastman and C. J. Hitzman, Journal of Vacuum Science and Technology B3, 634 (1985).

"Proton, Deuteron, and Helium Implantation into GaAs and LiNbd3 for Waveguide Fabrication," R G. Wilson, D. A. Betts, D. K. Sadana, J. M. Zavada and R G. Hunsperger, Journal of Applied Physics 57, 5006 (1995).

"Properties and Structure of Ca-Evaporated NbSi2;" Wu G., Zhang G., Wang Y. Y., Xu W., Li Y. H., C. G. Hopkins and M. D. Strathman (1985). Journal of Vacuum Science 8t Technology B3(6),1702 (1985).

"Rapid Thermal Annealing of Dopants Implanted into Preamarphized Silicon," T. E. Seidel, R. Kncell, G. PoG, B. Schwartz, F. A. Stevie and P. K. Chu, Journal of Applied Physics 58. 683 (1985).

"Evaluation of Accelerator-Based Secondary Ion Mass Spectrometry for the Ultra-Trace Elemental Characterization of Bulk Silicon," R J. Blatmer, J. C. Huneke, M. D. Strathman, R S. Hockett, W. E. Kieser, L. R. Killius, J. C. Rucklidge, G. C. Wilson and A. E. Litherland, Proceedings of SIMS V, Washington, D.C., October (1985).

268, "SIMS Imaging of Silicon Defects," R S. Hockett, D. A. Reed and D. H. wayne, Proceedings of SIMS V, Washington, D.C., October (1995).

"Lateral Elemental Distributions on a Corroded Aluminum Alloy Surface," R. L. Crouch, D. H. Wayne and R H. Fleming, Proceedings of SIMS V, Washington, D.C., October (1985).

"Direct Evidence of CaAggregation of Carbon and Oxygen in Ctiochralski-Silicon," F. Shimura, R S. Hockett, D. A. Recd and D. H. Wayne, Applied Physics Loam 47. 794 (1985).

"Quantitative Analysis with Laser Microprobe Mass Spectrometry," R W. Odom and I. C. Nieraeyer, Proceedings of SiMS V, Washington, D.Cy October (1985).

"Post Sputtering Ionization SerAndary Ion Mass Spectrometry: Glow Discharge Mass Spectrometry (GDMS) and Secondary NeutraLs Mass Spectrometry (SNMS)," P. K. Chu, Beijing CEIA, Beijing, China, November (1985) and Chinese Mass Spectrometry Society, Beijing, China, November (1985).

"SIMS Measurements of Oxygen in Heavily-Doped Silicon," R J Bteiler, R. S. Hockett, P, K. Chu and E. strathman, MRS '85, Boston, MA, December (1985).

"Direct Comparison of FTIR and SIMS Calibrations for [O] in Silicon;" P. K. Chu, R. S. Hockett and R G. Wilson, MRS'85, Boston, MA, December (1985).

"Ion Implantation Formation of Metallic Carbides in Steel Materials," C. G. Dodd, G. P. Meeker and S. M. Baumann., ASM Meeting, Peoria, IL (1984).

"Laser Microprobe Characterization of C Species in Interplanetary Dust Particles {IDP}," F. Radicati di Brotiolo, T. E. Bunch, S. Chang and D. E. Brownlee, Proceedings of Workshop on Micrometeorite Capture Experiments, Lunar Planetary Institutes, Houston, December (1985).

"Donor Creation During Oxygen Implanted Buried Oxide Formation," M. Delfino and P. K. Chu, MRS '83, Boston, MA, December (1985).

"A Study of Atomic and Molecular Arsenic Ion-Implanted Silicon," M. Delfuio, D. K. Sadana, A. E. Morgan and P. K. Chu, Journal of the Electrochemical Society 133.1900 {1986}.

"Rapid Thermal Annealing of Shallow, Diffused Contact Regions in GaAs," N. J. Kepler, N. W. Cheung and P. K. Chu, MRS BS, Boston, MA, December (1985).

"Dopant Redistribution During Pd2Si Formation Using Rapid Thermal Annealing," N. S. Alvi, D. L. Kwong, C. G. Hopkints and S_ M. Baumann, MRS '8S, Boston, MA, December (1985) and Applied Physics Letters 48. 1433 (1986).

"Spectra of Quaternary Ammonium Salts Taken by Fission-Fragment and Laser-Induced De,corption," B. W. Schueler and F. R. Krueger, Organic Mass Spectrometry 14. 439 (1979).

"Possibilities for a Laser-Induced Micro Mass Analysis of Bulk Surfaces;" B. W. Schueler, R Nitsche and F. Hillenkamp, SEM, Inc., Chicago, Illinois, O. Jahari, ed. (1980).

"Organic Mass Spectra Obtained by Fission-Fragment and Pulsed Laser-Induced Desorption," F. R Krueger and B. W. Schueler, Advances in Mass Spectrometry 8 919 (1980).

"Comparstive Study of Pulsed Laser and Fission Fragment Induced Desorption with Nucleotic Compounds," B. W. Schueler and F. R Ktueger, Organic Mass Spectrometry 15. ,295 (1980).

"Ion Formation from Alkali Halide Solids by High Power Pulsed Laser Irradiation," B. Jost, B. W. Schueier and F. R Krueger, Zeitschrift fur Naturforschung A37, 18 (1982).

"Kinetics of Ian Formation from Inorganic and Organic Salts by Pulsed Laser Irradiation," B. W. Schueter, P. Feigl and F. R. Krueger, Proceedings of the 30th Annual Conference on Mass Spectrometry & Allied Topics, Honolulu, HI (1982).

"Kinetics of Ion Formation from Salts by Pulsed-Laser Irradiation," B. W. Schueler, F. R. Krueger and P. Feigf, International Journal of Mass Spectrometry and Ion Physics 47. 3 (1983).

"Laser Micro Mass Analysis of Bulk Surfaces," F_ Hitlenkamp, P. Feigl and B. W. Schueler, Microbeam Analysis {1982}.

"LAMMA IOOa, a New Instrument for Bulk Microprobe Mass Analysis by Pulsed Laser Irradiation," P. Feigl, B. W. Schueler and F. Hillenkamp,lnternational Journal of Mass Spectrometry and Ion Physics 47, 15(1983).

"A Simple Technique of Ion Generation from Organic Solids by Ultrashort Electric Pulses," P. Feigl, F. R. Krueger and B. W. Schueler, Organic Mass Spectrometry 18.442 (1983).

"Time-of-Flight Measurements of Alkali Halide Clusters," W. Ens, R. Beavis, B. W. Schueler and K. G. Standing, Proceedings of the 31st Annual Conference on Mass Spectrometry and Allied Topics, Boston, MA (1983).

"Ion Formation from Solids Due to Fast Non-Eyuilibrium Phase Transitions: Two New Techniques and Common Features of Them All," P. Feigt, F. R Krneger and B. W. Schueler, Proceedings of the 31 St Annual Conference on Mass Spectrometry and Allied Topics, Boston, MA (1983).

"Secondary Ion Mass Spectrometry by Time-of-Flight," K. G. Standing, R Beavis, W. Ens and B. W. Schuehr, International Journal of Mass Spectrometry and Ion Physics 53. 125 (1983).

"Influence of the Static Sample Temperature on the Mass Spectra of Alkali Halides and Metals Obtained with Pulsed Laser Induced Ion Generation," B. W. Schueler, P. Feigl and F. R Krueger, Zeitschrift fur Naturforschung A.8,1078 (1983).

"Alkali Halide Cluster Ions Observed by Time-of-Flight SIMS," B. W. Schueler, R Beavis, W. Ens, D. E. Main and K. G. Standing, Proceedings of the 32nd Annual Conference on Mass Spectrometry and Allied Topics, San Antonio, TX (1984).

"A Multistop Time Digitizer for the Manitoba Tine-of-Flight Mass Spectrometer," W. Ens, R Beavis, D. E. Main, B. W. Schueler and K. G. Standing, Proceedings of the 32nd Annual Conference on Mass Spectrometry and Allied Topics, San Antonio, TX (1984).

"Secondary Ion Multiplicity Under Bombardment with keV Primary Ions," R Beavis, W. Ens, D. E. Main, B. W. Schueler and K G. Standing, Proceedings of the 32nd Annual Conference on Mass Spectrometry and Allied Topics, San Antonio, TX (1984).

"Determination of Organic and Inorganic Compounds in the Femtogram Range by Laser Microprobe Mass Spectrometry," P. Feigl, F. R. Krueger and B. W. Schueler, MilQOChimica Acta 1 l. 85 (19$4).

"Secondary Ion Mass Spectra of Alkali Halides," B. W. Schueler, R. Beavis, W. Ens, D. E. Main and K. G. Standing, Surface Science 16~0 571 (1995).

"The Use of Microtomed Thin Sections for the Analysis of Geological Materials with Auger Electron Spectroscopy," G. P. Meeker and R H. Fleming, MAS Meeting, Albuquerque, NM, August (1986).

"Determination of Elemental Relative Sensitivity Factors in the Analysis of Geological Samples by LIMS," F. Radicati di BrozoIo, MAS Meeting, Albuquerque, NM, August (I 986).

"Laser Microprobe Study of Carbon in Interplanetary Dust Particles (IDP)," F. Ralicati di Brozolo, T. E. Bunch and S. Chang, ISSOLr86, {1986}.

"Atom and Acceptor Depth Distributions for Aluminum Channeled in Silicon as a Function of Ion Energy and Crystal Orientation," R G. Wilson, D. M. Jamba, P. K. Chu, C. G. Hopkins and C. J. Hitznan, Journal of Applied Physics 60 ,2806 (1986).

"Thin, Highly Doped Layers of Epitaxial Silicon Deposited by Limited Reaction Processing," C. M. Gronet, J. G. Sturm, K. E. Williams, J. F. Gibbons and S. D. Wilson, Applied Physics Letters 48. 1012 (1986).

"A Novel Siiicided Shallow Junction Technology for CMOS VLSI," D_ L. Kwong, Y. H. Ku, S. K. Lee, N. S. Alvi, P. K. Chu, Y. Zhau and J. M. White, MRS'8G Spring Meeting, Palo Alto, CA, April (1986).

"The Use of Rutherford Backscattering to Distinguish Surface and Bulk Species in Zeolites," S. Baumann, M. D. Strathtnan and S. L. Suib, Journal of the Chemical Society, Chemical Communications 559. 309 (1986)

"Quantitative Depth Profiling of B and P in Borophosphosilicate Glass," P. K. Chu, Proceedings of STMS 1V, Osaka, Japan, November (1983)

"Analysis of PSG and BPSG by Bulk and Depth Profiling Methods," P. K. Chu and G. A. Kladnik, International Conference on Semiconductor and Integrated Circuit Technology, Beijing, China (1986)

"Computer Control Software for the Resistive Anode Encoder Detector and the Cameca IMS-3f Ion Microprobe," R. L. Crouch and C. J. Hitzman, Proceedings of the Microbeam Analysis Society Meeting, Albuquerque, NM, (1986)

"Secondary Ian Mass Spectra of Metal Halides Obtained by Time-of-Flight SIMS," B. Schueler, R Beavis, G. Balbach, W. Ens, D. E. Main and K. G. Standing, Proceedings of the 33rd Annual Conference on Mass Spectrometry and Allied Topics, San Diego, CA (1985).

"Cationization of Organic Molecules Under Pulsed Laser Induced Ion Generation," B. W. Schueler, P. Feigl, F. R Krueger and F. Hillenkamp, Organic Mass Spectrometry b 502 (1981).

"SIMS Studies of Langmuir-Blodgett Multilayers," G. Bolbach, R Beavis, W. Ens, D. E. Main, B. Schueler and K. G. Standing, Proceedings of the 33rd Annual Conference on Mass Spectrometry and Allied Topics, San Diego, GA, (1985).

314, "Energy and Angle-Resolved SIMS Studies of C12 Adsorption an Ag{110}; Evidence for Coverage Dependent Electronic Structure Rearrangements," D. W. Moon, R J. Bleiler, C. C. Chang and N. Winograd, Proceedings of SIMS V, Washington, D.C., October (t985).

3 "A Comparison of Electron-Gas SNMS, RBS and AES for the Quantitative Depth Profiling of Microscopically Modulated Thin Films," H. Oechsner, G. Bachmann, P. Beckmann, M. Kopnarslci, D. A. Reed, S. M. Baumann, S. D. Wilson and C. A. Evans, Jr., Proceedings of SIMS V, Washington, D.C., October (1985).

"Time-of-Flight Measurements in Secondary Ian Mass Spectrometry," K. G. Standing, R. Beavis, G. Balbach, W. Ens, D. E. Main and B. Schueler, Proceedings of SIMS V, Washington, D.C., October (1985).

"Coincidence Measurements with the Manitoba Time-of-Flight Mass Spectrometer," W. Ens, R. Beavis, G. Bolbach, D. E. Main, B. Schueler and K. G. Standing, Proceedings of SIMS V, Washington, D.C., October (1985).

"Time-of-Flight Investigations of Secondary Ion Emission from Metal Halides," B. Schueier, R. Beavis, G. Balbach, W. Ens, D. E. Main and K. G. Standing, Proceedings of SIMS V, Washington, D.C., October (1985).

"Application of Glow Discharge Mass Spectrometry and Sputtered Neutral Mass Spectrometry to Materials Characterization," P. K. Chu, J. C. Huneke and R. J. Blathner, Journal of Vacuum Science and Technology A5 295 (1987).

"Nonresonant Multiphoton Ionization of Laser-Sputtered Neutrals," B. Schueler and R. W. Odom, Proceedings of the 34th Annual Conference on Mass Spectrometry and Allied Topics, Cincinnati, OH (1986).

"Quantitative Elemental Analysis by Laser Ionization Mass Spectrometry (L1MS)," R W. Odom and I. C. Niemeyer, Proceedings of the 34th Annual Conference on Mass Spectrometry and Allied Topics, Cincinnati, OH (1986) and Proceedings of 3rd International Laser Microprobe Mass Spectrometry Workshop, Antwerp, Belgium (198b).

"Sificided Shallow Junction Formation by Ian Implantation of Impurity Ions into Silicide Layers and Subsequent Drive-in," D. L. Kwong, Y. H. Ku, S. K. Lee, E. Louis, N. S. Alvi end P. K. Chu, Journal of Applied Physics 61, 5084 (1987).

"The Total System Approach to Wafer Ecology," R J. Falster, R D. Wingrove, R S. Hockett, R. A. Craven and D. Golland, SemiconlEurope'86, Zurich, Switzerland (1986).

"Automated Dry Fraction Collection for Microbore High-Performance Liquid Chromatography - Mass Spectrometry," R. C. Beavis, G. Bolbach, W. Ens, D. E. Main, B. W. Schueler and K. G. Standing. Journal of Chromatography 359,489 (19$6).

"A Data System for Time-of-Flight Measurements," W. Ens, R Beavis, G. Balbach, D. Main, B. W. Schueler and K. G. Standing, Nuclear Instruments and Methods in Physics Research A245, 146 (1986).

"SIMS Measurement of Na," R. S. Hockett, P. K. Chu and R. J. Bleiler, Proceedings of Siti-Con, Portland, OR, June (1486).

"Profile Studies of MeV Ions Implanted into Si," H. Wang, E. Deng, N. W. Cheung, P. K. Chu, E. M. Strathman and M. D. Strathman, Nuclear Instruments and Methods in Physics Research H21, 447 (1987).

"Nonresonant Multiphoton Ionization of Neutrals Ablated by the Laser Microprobe Technique," B. Schueler, R W. Odom and C. A. Evans, Jr., Proceedings of 3rd International Laser Microprobe Mass Spectrometry Workshop, Antwerp, Belgium (I986).

"Oxygen and Carbon Defect Characterization in Silicon by SIMS," R. S. Hocked, P. B. Fraundorf, D. A. Reed, D. H. Wayne and G. K. Fraundorf, MRS '85, Boston, MA, December (1985).

"Non-Resonant Multiphoton Ionization of the Neutrals Ablated in Laser Microprobe Mass Spectrometry Analysis of GaAs and Hgo_,BCdo..nTe," H. W. Schueler and R W. Odom, Journal of Applied Physics 61, 4652 (1987).

"Quantitative Materials Analysis by Laser Microprobe Mass Analysis," R. W_ Odom, C. J. Hitunan and B. W. Schueler, MRS'86, Palo Alto, CA, April (1986).

"A Time-of-Flight Mass Spectrometer with an Ion Mirror Improved Resolution and Metastable Ion Analysis," X. Tang, R. Beavis, W. Ens, B. W. SchueleT and K. G. Standing, Proceedings of the 34th Annual Conference an Mass Spectrometry and Allied Topics, Cincinnati, OH (1986).

"Secondary Ion Time-of-Flight Mass Spectrometry at Manitoba," K. G. Standing, R. Beavis, G. Bolbach, W. Ens, F. Lafortune, D. Main, B. W. Schueler, X. Tang and J. B. Wesmaore, Proceedings of the 34th Annual Conference on Mass Spectrometry and Allied Topics, Cincinnati, OH (1986)

"Time-of-Flight Studies of Metastable Secondary Ion Decays," B. Schueler, W. Ens, D. E. Main and X. Tang, Proceedings of the 34th Annual Conference an Mass Spectrometry and Allied Topics, Cincinnati, OH (198b).

"Oxidation Characteristics of TaSi21Si Films in Atmosphere and High Pressure Steam," Wang Y. Y., Chen J., Zhang A., C. G. Hoplans and M. D. Strathman, International Conference on Semiconductor and Integrated Circuit Technology, Beijing, China (1986) and 18th Conference on Solid State Devices and Materials, Tokyo, Japan (198e7.

"The Experimental Research of Tungsten Silicide GaAs Schotttcy Contacts," Zhu Z., Z. J. Lemnias, J. B. StimmeU, M. D. Strathman, C. G. Iiopkins and N. W. Cheung, International Conference on Semiconductor and Integrated Circuit Technology, Beijing, China (198G).

"Coverage Dependent Structural Changes During Chlorine Adsorption on Ag(1101," D. W. Moon, R- J. Bteiler and N. Winograd, Journal of Chemical Physics 85,109? (1986).

"Ion Neutral Correlations Following Metasiable Decay," K. G. Standing, W. Eas, R Beavis, G. Boliach, D. Main, B. Schueler and J. B. Westmore, Proceedings of the Third International Conference On Ion Formation from Organic Solids, Munster, Germany (1986).

"Thin Film Microanalysis using Laser Ablation and Laser Ionization Mass Spectrometry," R W. Odom and B. Schueler, International Conference on Metallurgical Coatings, San Diego, CA (1987) and Thin Solid Films 154, I (1987).

"Growth of GeSilSi Strained-Layer Superlattices Using Limited Reaction Processing," C. M. Gronet, C. A. King, W. Opyd, J. F. Gibbons, S. D. Wilson and R. Hull, Journal of Applied Physics 61 , 2407 (1987)

"Three Dimensional SIMS Analysis of Surface Modified Materials and the Application to t3C Implanted Steels," R. H. Fleming, G. P. Meeker and R J. Blatmer, International Conference on Metallurgical Coatings, San Diego, CA (1987) and Thin Solid Films 153 197 (1987).

"Range and Shape Factors, Damage, Regrowth, and Redistribution for Ag Implants in (100) and (111) Si," R G. Wilson, D. M. Jamba, D. K. Sadaaa and C. G. Hopkins, Journal of Applied Physics 61, 1355 (19$'7).

"Boron Diffusion in Polycrystalline Silicon," M. Y. Ghannon, R W. Dutton and S. W. Novak, MRS' 86, Boston, MA, December (1986).

"Rise and Fall of a Basalt-Trachyte-Rhyolite Magma System at the Kane Springs Wash Caldera, Nevada," S. W. Novak and G. A. Mahood, Contributions to Mineralogy and Petrology 94, 352 (1986).

"Catalytic Dehydrogenation of Gyclohexene on Silica averlayer Films," J. M. Cogen, K. Ezaz-Nikpay, W. F. Maier, R. H. Fleming and S. M. Baumann, Angewandte Chemie 26,1182 (1987).

"Catalytic C-H Bond Activation on Silicon Dioxide Qverlayers," A. B. McEwen, W. F. Maier, R. H. Fleming and S. M. Baumann, Nature 329 531(i987).

"Implant Profiles in GaP, GaAs, InP, and InSb: Influence of Furnace and Rapid Thermal Annealing," R. G. Wilson and S. W. Novak, SPIE. Conference, Panama City, FL, March (1987).

"4OAr-39Ar and K-Ar Dating of the K-Rich Rocks from the Roccamonfena Volcano, Roman Comagmatic Region, Italy," F. Radicati di Brozolo, P. Di Girolama, B. Turi and M. Oddone. Geochimica et Cosmocbimica Acta 52, 1435 (1988).

"Auger Microprobe Analysis of Primitive Solar System Materials," G. P. Meeker, Meteoritics 21, 452 (1986).

"Past Ionization of Neutrals Ablated in Laser Microprobe Mass Spectrometry," B. Schueler, R Odom and C. A. Evans, Jr., Proceedings of the 35th Annual Conference on Mass Spectrometry and Allied Topics, Denver, CO, May (1987).

"Characterization of Isomeric Organic Species by Laser Ionization Mass Spectrometry (LIMS)," F. RadicaRi di Brozolo, SIMS VI, Versailles, France (1987).

"Nitrogen Effect on Oxygen Precipitation in Czochralski Silicon," F. Shimura and R S. Hockett, Applied Physics Letters 4-,8 224 (1986).

"The Redistribution of Impurities under RTP for Polysilicon Capped Silicon," R. S. Hockett, MRS '87, Spring Meeting, Anaheim, CA (1987).

"SIMS Characterization of Axial [O] in 150 mm Diameter PI(B) <l0'7> CZ-Silicon," R. S. Hockett, Electrochemical Society Conference (198?).

"Tlonresonant Multiphoton Post Ionization of Neutrals Generated in a Laser Microprobe," B. Schueler and R W. Odom, SIMS VI, Versailles, France (198'7).

"Oxygen and Carbon Defect Characterization in Silicon by SIMS," I- S. Hockett, Proceedings of the International Conference on Semiconductor and Integrated Circuit Technology, Beijing, China (1986).

"Differentiation Between Isomeric O-allcylthymidines by Time-of-Flight SIMS," F. Lafortune, R Beavis, B. Schueler, X. Tang, K G. Standing, and J. B. Wesmnore, Proceedings of the 35th Annual Conference on Mass Spectrometry and Allied Topics, Denver, CO, May (1987).

"SIMS Depth Profiling and Implantation Profiles in Crystalline AI203," S. P. Smith and R. G. Wilson, SIMS VI, Versailles, France (1987).

"SIMS Quantitative Trace Element Analysis of Microdroplets," R. W. Odom, G. Lux, R H. Fleming, P. K. Chu and R J. Blattner, SIMS VI, Versailles, France (1987).

"Catalyst Characterization: Silica Overlayers on Transition Metals," R. H. Fleming, S. M. Baumann, G. P. Meeker and W. F. Maier, SIMS VI, Versailles, France (1987).

"Two- and Three-Dimensional Characterization of AIGaAs Heterostructunes Using SIMS," S. W. Novak and R. G. Wilson, 14th International Symposium on GaAs and Related Compounds, Crete, Greece (I987).

"Fundamentals of Sputtered Neutral Mass Spectrometry," U. Kaiser and J. C. Huneke, MRS Bulletin, XII#6. 48 (1987).

"Characterization Techniques for VLSI Silicon," R A. Craven, F. Shimura, R S. Hockett, L. W. Shive, P. B. Fraundorf and G. Keefe-Fraandort VLSI Science and Technology/198d, ed. by K. E. Bean and G. A. Razgonyi, ECS Vol. 84-7, p. 20 (19$4).

"Oxygen Behavior in Heavily Sb-Doped CZ-Silicon," F. Shimura, W, Dyson, J. W. Moody and R. S. Hockett, VLSI Science and Technology/1985, ed. by W. M. Bullis and S. Broydo, ECS Vol. 85-5, p. 507 (1985).

"Controlled Substitutional Doping of CdTe Thin Films Grown by Photoassisted Molecular-Beam Epitaxy," R. N. BicJrnell, N. C. Giles, !. F. Schetzana and C. Hittman, Journal of Vacuum Science and Technology AS, 3059 (1987).

"SIMS Measurements of Impurities and Dopants in A1GaAs Heterostructures," S. W. Novak and R G. Wilson, SIIVIS VI, Versailles, France (1987).

"Relative Sensitivity and Quantibtion in Glow Discharge Mass Spectrometry : a Progress Report," J. C. Huneke, Journal of Research of the National Bureau of Standards 93, 392 (1988).

"Systematics of SIMS Relative Sensitivity Factors Versus Electron Affinity and Ionization Potential for St Ge, GaAs, GaP, InP, and HgCdTe Determined from Implant Calibration Standards for About 50 Elements," R G. Wilson and S. hV. Navak, SIMS VI, Versailles, France (198'n.

"Improved SIMS Backgrounds and Detection Sensitivities for Implants Via the Use of Rarer Isotopes, Including 2H, I3C, 15N, 180, 3051, 345, and 54Fe," R G. Wilson, S. W. Novak and J. C. Norberg, SIIVIS VI, Versailles, France (1987).

"Relative Sputtering Rates and Ion Yields of Semiconductors, Metals, and Insulators Under Oxygen and Cesium Ion Bombardment," R. G. Wilson, S. W. Novak, S. P. Smith, S. D. Wilson, and J. C. Norberg, SIMS VI, Versailles, France (19$7).

"The SIMS Measurement of Nitrogen in Nitrogen-Doped. CZ-Silicon," R S. Hockett, C. A. Evans, Jr. and P. K. Chu, SIMS VI, Versailles, France (1987).

"Depth Distributions of Be and Si Implanted into GaF, InP, and InSb, After Implantation and After Furnace or Flash Lamp Annealing, Compared with GaAs," R. G. Wilson, S. W. Novak and J. M. Zavada, 14th International Symposium on GaAs and Related Compounds, Crete, Greece (1987).

"Ranges, Straggles, and Shape Factors of 20 keV Through 6 MeV Random and Channeled Si Implants into GaAs, Unannealed and Annealed," R G. Wilson, D. M. Jamba, D. C. Ingram, P. P. Pronka, P. E. Thompson and S. W. Novak, 14th International Symposium an GaAs and Related Compounds, Crete, Greece (1987).

"Redistribution of Implanted Hydrogen and Substrate Dopants in Annealed (lp0 to 6p0°C) Substrates of GaP(S), InP(S), InP(Sn), GaAs(Si), and GaAs(Zn)," R G. Wilson, S. W. Novak and J. M. Zavada, 14th International Symposium on GaAs and Related Compounds, Crete, Greece (1987).

"Depth Profiles and Redistribution During Annealing of 300-keV Hydrogen (Protons) Implanted into an AIAsIGaAs Superlattice," R G. Wilson, J. M. Zavada, S. W Novak and S. P. Smith, 14th International Symposium an GaAs and Related Compounds, Crete, Greece (1987).

"Quantitative Depth Profiling of (Al, Ga)is with Sputtered Neutral Mass Spectrometry," U. Kaiser, G. P. Meeker and J. C. Huneke, Journal of Vacuum Science and Technology A6,1082 (198$).

"Requirements for Standards for the Characterization of III-V Semiconductor Materials," G. P. Meeker, S. E. Buttrill, Jr., S. M. Baumann, J. C. Huneke, U. Kaiser and J. Paque, Second Annual Conference for Quantitative Surface Analysis, Monterey, CA (1987).

"Gettering of Gold and Copper with Implanted Carbon in Silicon," H. Wong, N. W. Cheung and P. K. Chu, Applied Physics Letters 52, $89 (1987).

"Proximity Gettering with MeY Carbon and Oxygen Implants," H. Wong, N. W. Cheung, P. K. Chu, J. Liu and J. W. Mayer, Applied Physics Letters 52,1023 (1987).

"Redistribution of Implanted Hydrogen in p+ GaAs(Zn) and n+ GaAs(Si) Crystals," J. M. Zavada, R G. Wilson, S. W. Novak, A. R Von Neida and S. J. Pearton, MRS'87, Fall Meeting, Boston, MA (1987).

"The Morphology and Characteristics of TaSi2/Si Films Oxidized at High Pressure," Y. Y. Wang, J. Chen, J. Tao, S. Feng, A. Z. Zhang, J. B. Stimmell, C. G. Hopkins, M. D. Strathman and M. H. Herman, Journal of Vacuum Science and Technology BS. 1756 (1987).

3$2. "Mechanisms of Hydrogen Transfer and Bond Scission of Strongly Bonded Coal Structure.s in Donor-Solvent Systems," D. F. McMillen, R. MaWotra, S.-J. Chang, W. C. Ogier, S. E. Nigenda and R. H. Fleming, Fuel 66,16I1(1987).

"Electrical Characterization of In-situ Epitaxially Grown Si p-n Junctions Fabricated Using Limited Reaction Processing," C. A. King, C. M. Gronet, J. F. Gibbons and S. D. Wilson, IEEE Electron Device Letters 9 229 (1987).

"The Behavior of Noble Gases in Silicate Liquids: Solution, Diffusion, Bubbles and Surface Effects, with Applications to Natural Samples," G. Lux, Geoc6imica et Cosmoehimica Acta 51,1549 (1987).

"Characterization of Interplanetary Dust by Low Voltage Scanning Electron microscopy," D. Blake, T. Bunch, T. Reilly and R Fleming, Lunar Interplanetary Conference #19 (1987).

"Quantitative Trace Element Analysis of Microdroplet Residues by Secondary Ion Mass Spectrometry," R. W. Odom, G. Lwc, R. H. Fleming, P. K. Chu, I. C. Niemeyer and R. J. Blattner, Analytical Chemistry GO 2070 {1988}.

"Comparison of SNMS, SIMS, and AES Sputter Depth Profiling for Quantitative High Depth Resolution

Analysis of Thin Layers and Interfaces," G. P. Meeker, J. C. Huneke, U. Kaiser and C. J. Hitzman, Micmbeam Analysis Society Meeting, Kona, Hawaii (1987).

'Pliocene Volcanic Rocks of the Coso Range, Inyo County, California," S. W. Novak and C. R Bacon, U. S. Geological Survey Professional Paper 1383 (1986).

"Dependence of Critical Thickness an Growth Temperature in GexSil _xISi Superlattices," R H. Miles, T. C. McGill, P. P. Chow, D. C. Johnson, R. J. Hauenstein, C. W. Nieh and M. D. Strathman, Applied Physics Letters §1916 (1988).

"SIMS Molecular Ion Imaging of Simple Neuro-Compounds," R W. Odom, Microbeam Analysis Society Meeting, Milwaukee, WI (1988).

"Laser Microprobe Analysis of Zirconium Compounds: Survey Mass Spectra and Relative Ion Yields," R W. Odom and I. C. Niemeyer, Micrabeam Analysis Society Meeting, Milwaukee, WI (1988).

"An Evaluation of Ultra Surface (<3 nm), Trace (El i/csn2) Impurity Analysis of Silicon using a New X-ray Technique," R S. Hockett, S. M. Baumann and E. Schemmel, 174th Meeting of the Electrochemical Society, Chicago, IL {1988}.

"Effect of Reactive Ion Etching Process on Al(Cu) Corrosion," C.-H. Lia and I. D. Ward, International Conference on Materials and Process Characterization for VLSI, Shanghai, China (i988).

"STMS and GDMS Analysis for U and Th in Ultra High Purity Al," J. C. Huneke, S. P. Smith and R J. Bleiler, International Conference on Materials and Process Characterization for VLSI, Shanghai, China (1988).

"Self-Aligned pn Junction and Silicide Contact Formation by Ion Implant Through Ti and its Silicide," B: Z. Li, S.-F. Zhau, J. Li, F. Hong and P. K. Chu, International Conference on Materials and Process Characterization for VLSI, Shanghai, China (1988).

"Electron Beam Eleeiroreflectance Studies of GaAs and CdTe Surfaces," P. M. Raccah, J. W. Garland, S. E. Buttrill, Jr., L. Franeke and J. Jackson, Applied Physics Letters 52 1584 (1988).

"Nondestructive Depth Profiling of Rare-Earth and Actinide Zeolites via Rutherford Backscattering Methods," S. M. Baumann, M. D. Strathman and S. L. Suib, Analytical Chemistry 60,1046 (1988).

"SIMS Molecular Ion Imaging of Organic Molecules on Surfaces," R W. Odom, Proceedings of the 36th Annual Conference on Mass Spectrometry and Allied Topics, San Francisco, CA, June (1988).

"Method and Apparatus for Surface Diagnostics," C. H. Becker, K. T. Gillen and 5. E. Buttrill, Jr., U. S. Patent Number 4,733,073, March 22 (19$8).

"Organic Polymer Analysis by Laser Ionization Mass Spectrometry (LIMS)," F. Radicati di Bmzalo, R W. Odom, P. B. Harrington and K. J. Voorhees, Proceedings of the 36th Annual Conference on Mass Spectrometry and Allied Topics, San Francisco, CA, June (1988).

"Characterization of Plasma Source Ion-Implanted Steels," G. P. Meeker, J. R Canrad, S. M. Baumann and R S. Post, 6th International Conference on Ion Beam Modification of Materials, Tokyo, Japan (1988).

"Outdiffusion of Oxygen and Carbon in Czochralski Silicon," F. Shimura, T. Higuchi and R. S. Hocdcett, Applied Physics Letters 53,69(1988).

"Nature of the Pulsed Laser Process for the Deposition of High T. Superconducting Thin Films," T. Venilcatesan, X. D. Wu, A. lnam, Y. Jeon, M. Croft, E. W. Chase, C. C. Chang, J. B. Wachtman, R. W. Odom, F. Radicaxi di Brozolo and C. A. Magee, Applied Physics Letters 53. 1431 (1988).

"Digital Ion Imaging of Electrolyte Movement in the Retina-Chomid Complex: Relative Quantitation," M. S. Burns, R. Taffet and C. Hitzman, SIMS VI, Versailles, France (198?).

"Implanted Standards for Ion Microanalysis of Oxygen in Beryllium," R. G. Musket, C. W. Price and J. C. Norberg, Nuclear Instruments and Methods B42. 245 (1989).

"Accommodation of Lattice Mismatch in GeXSiI-XiSi Superlattices," R H. Miles, P, P. Chow, D. C. Johnson, R J. Hauenstein, O. J. Marsh, C. W. Nieh, M. D. Strathman and T. C. McGill, Journal of Vacuum Science and Technology Bb,1382 (1988).

"Partial Substitution of 180 in YBa2Cu307: Investigations of Inhomogeneities and Their Effect on Tr," W. K. Ham, S. W. Keller, !. ?J. Michaels, A. M. Stacy, D. Krillov, D. T. Hodul and R- H. Fleming, Journal of Materials Research 4 504 (1989).

"Structural and Electrical Properties of Heavily-Doped Rapid-Thermal-Processed Polysilicon Emitters and Contacts on Silicon," B. Raicu, L. A. Christel, K.-G. Huang, S. Hashirnoto, W. M. Gibson and I. D. Ward, MRS'87, Fall Meeting, Boston, MA (1987).

"Plasma Source Ion Implantation Dose Uniformity of a 2ac2 Array of Spherical Targets," J. R. Conrad, S. Baumann, R. Fleming and G. P. Meeker, Journal of Applied Physics 65 1707 (1989).

"Al-Li Investment Castings Coming of Age," D. Webster, T. G. Haynes III and R H. Fleming, Advanced Materials and Processes, June (1988).

"Characterizations of Film Structure Formed by Solid State Interaction of Ti/Si," B.-Z. LL F. Hong, S.-F. Zhou, G.-B. Jiang, P. Liu, C. G. Hopkins and M. D. Strathman, International Conference on Materials and Process Characterization for VLSI, 1988, Shanghai, China (1988).

"Three Dimensional Material Characterization Using SIMS and Digital Ion Imaging," C. A. Evans, Jr., International Conference on Materials and Process Characterization for VLSI, 1988, Shanghai, China (1988).

"An Overview of Rutherford Backscattering (RBS)," M. D. Strathman, International Conference on Materials and Process Characterization for VLSI, 1988, Shanghai, China (1988).

"Limited Reaction Processing: Silicon and III-V Materials," J. F. Gibbons, S. Reynolds, C. Gronet, D. Vook, C. King, W. Opyd, 5. Wilson, C. Nauka, G. Reid and R Hull, MRS'87, Spring Meeting, Anaheim, CA (1987).

,Analyzing Impurities on Silicon Substrates," R. S. Hockett, Semiconductor International, page 66, November (1988).

"Characterizing the Top 10,000 A of Ceramics," R. J. Blaitner, Proceedings of the 41st Pacific Coast Regional Meeting Of the American Ceramic Society, San Francisco, CA (1988).

"Characterization of Materials Using SIMS Image Depth Profiling," S. W. Novak, H. Kanbe.r and R Lowden, Proceedings of the 41st Pacific Coast Regional Meeting of the American Ceramic Society, San Francisco, GA (1988).

"Electrical Effects of Atomic Hydrogen Incorporation in GaAs-on-Si," J. M. Zavada, 5. J. Pearton, R. G. Wilson, C. S. Wu, M. Stavola, F. Ren, J. Lopata, W. C. Dautremont-Smith and S. W. Novak, Journal of Applied Physics 65, 347 (1989).

"Accurate Profile Simulation Parameters for BF2 Implants in Pre-Amarphized Silicon," A. F. Tasch, H. Shin, C. Park, J. Alvis, S. Novak and J. Pfiester, IEEE Transactions on Electron Devices 36, 149 (1989).

"Effects of Rapid Thermal Anneals on Boron Implanted GaAs," R C. Bowman, Jr., P. M. Adams, M. H. Herman and S. E. ButtriIl, Ir., MRS'$8, Fall Meeting, Boston, MA (1988).

"'Me New Surface Analysis: Part III. Put Surface Analysis to Work - in R&D," P. K. Chu and R. J. Blattner, Semiconductor International, page 88, January (1989).

"EiI'ects of Helium Ion Implantation on the Optical and Crystal Properties of GaAs," R C. Bowman, Jr., P. M. Adams, J. F. Knudsen, S. C. Moss, P. A. Dafesh, D. D. Smith, M. H. Herman and I. D Ward, MRS'89, Spring Meeting, San Diego, CA (1989).

"Microanalydcal Characterization of Prebiological Components in Interplanetary Dust," F. Radicati di Browlo, G. P. Meeker and R H. Fieming, Microbeam Analysis Society Meeting (1989).

"A New Technique for Quantitative Elemental Analysis of the Near Surface Region (<3 nm) of Planar Solids," R S. Hockett, Microphysics of Surfaces, Beams and Adsorbates Topical Meeting, Salt Lake City, UT (1989).

"Comparison of Wafer Clewing Processes using Total Reflection X-ray Fluorescence (TJQtF')," R S. Hackett and W. Katz, Journal of the Electrochemical Society 136, 3481 (1989).

"Cryogenic Sample Manipulator for Multipurpose Sample Analysis;" V. K. F. Chia, D. K. Veirs and G. M. Rosenblatt, Journal of Vacuum Science and Technology A7.108 (1989).

"Frontside Gettering for NIN+{Sb)," R S. Hockett, Proceedings of 2nd ULSI Symposium, ECS (1984).

"Rule-Building Expert System for Classification of Mass Spectra," P. de B. Harrington, T. E. Street, K. J. Voorhees, F. Radicati di Brozalo and R W. Odom, Analytical Chemistry 61, 715 (i989).

"XPS and LIMS," A. M. Hitt, I. Artaki, F. Radicati di Brozalo, R W. Odam, A. H. Jabbar and K. L. Morton, PC FAB, February, gage 108 (1989).

"The Correlation Between Quantitative Surface Metallic Contamination and RTP-Induced Surface Defects," R S. Hockett, MRS'89, Spring Meeting, San Diego, CA (t9$9).

"Advantages of Single-Photon Ionization over Multiphoton Ionization for Mass Spectrometric Surface Analysis of Bulk Organic Polymers," J. B. Pallix, U. Schuhle, C. H. Becker and D. L. Huestis, Analytical Chemistry 61, 805 (1989).

"Shallow, Silicided p+ln Junction Formation and Dopant Diffusion in Si02ITiSi2ISi Structure," Y. H. Ku, S. K. Lee, D. L. Kwong and P. K. Chu, Applied Physics Letters 54, 1684(1999).

"Anomalous Diffusion of Nitrogen in Nitrogen-Implanted Silicon," R. S. Hockett, Applied Physics Letters 54,1793 (1989).

"A New Time-of-Flight Secondary Ian Microscope," B. Schueler, D. A. Reed and P. Sander, Proceedings of the 37th Annual Conference on Mass Spectrometry and Allied Topics, Miami Beach, FL, May (1989).

"Organic 5urFace Analysis With a Time-of-Flight Secondary Ion Microscope," B. Schueler, P. Sander and R. W. Odom, Proceedings of the 37th Annual Conference on Mass Spectrometry and Allied Topics, Miami Beach, FL, May (1989).

"Laser Ionization Mass Spectrometry (LIMS): Technique and Applications," R W. Odom and C. A. Evans, Jr., Proceedings of the 37th Annual Conference on Mass Spectrometry and Allied Topics, Miami Beach, FL (1989).

"Bulk Polymer Analysis Using Laser Ionization Mass Spectrometry (LIMS) and Pattern Recognition Techniques," R W. Odom and F. Radicati di Bmzolo, Proceedings of the 37th Annual Conference on Mass Spectrometry and Allied Topics, Miami Beach, FL (1989).

"Nondestructive Imaging Detectors for High Energy Particle Beams," R W. Odom, M. D. Strathman, S. E. Buttrill, Jr. and S. M. Beumann, Nuclear Instruments and Methods B44_ 465 (1990).

"Stoichiometric Dry Etching of Mercury Cadmium Telluride Using a Secondary Afterglow Reactor," J. E. Spencer, J. H. Dinan, P. R Boyd, H. Wilson and S. E. Buttrill, Jr., Journal of Vacuum Science and Technology A7 676(t989).

"An Improved Approach to Accurately Model Shallow B and BF2 Implants in Silicon," A. F. Tasch, H. Shin, C. Park, J, Alvis and S. Novak, Journal of the Electrochemical Society 136, 810 (1989)-

"Unenbanced Surface Raman Spectroscopy of Nitrogen Physisorbed on Ag (111)," D. K. Veirs, V. K. F. Chin and G. M. Rosenbiatt, Langmuir 5 633 (1989).

"iTltrahigh-Vacuum Apparatus for Surface Spectroscopy and Characterization at Cryogenic Temperatures," V. K. F. Chia, D. K. Veirs and G. M. Rosenblatt, Review of Scientific Instruments 64, 1161 (1989).

"Ultrapure Materials for Alpha Particle-Sensitive Applications," J. A. Dunlop, K. E. Ritala, J. R Gibbard, R. Beauprie, B. Pouliquen, J. H. Reeves, J. C. Huneke and W. A. Vieth, JOM, p. 18, June (1989).

"SCATT," M. D. Strathman, Workshop on High Energy and Heavy Ion Beams in Materials Analysis, Albuquerque, NM, (1989), MRS Conference Proceedings Series (1990).

"Process Development and Control of Heavy Metal Particulates Using Total Reflection X-Ray Fluorescence (TXRF)," R S. Hockett, SEMI Advanced Semiconductor Processing Symposium, Boston, MA (1989).

"Control of Semiconductor Surface, Trace Metal Contamination By Total Reflection X-Ray Fluorescence (TXRF)," R. S. Hockett, Proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors, Yokohama, Tokyo (1989).

"Ion Microscopy of Fluorine-Decorated Silicon Defects," R Brigham and R. S. Hocketi, SIMS VII, Monterey, CA (1989).

"The Practical Use of PolyencapsulationlSIMS for Quantitative Surface Analysis of Silicon Substrates," R. S. Hockett and J. C. Norberg, SIMS VII, Monterey, CA (1989).

"Injection and Detection Schemes for Accelerator-Based SIMS," S. P. Smith and R S. Hockett, SIMS VII, Monterey, CA (I989).

"A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC-Grown GaAs," A. Bindal, K. L. Wang, S. J. Chang, M. A_ Kallel and P. K. Chu, Journal of the Electrochemical Society 13^, 2414 (i989).

"Doubly-Charged Matrix Argide Cluster Ions in GDMS Spectra," W. Vieth, J. C. Huneke and N. McKinnon, SIMS VII, Monterey, CA (1989).

"Trace Oxygen Analysis by Glow Discharge Mass Spectrometry," J. C. Huneke, W. Vieth and N. McKinnon, SIMS VII, Monterey, CA (1989).

"Polymer Characterization and Classification by Use of LAMMS and Principal Component Analysis," R W. Odom, F. Radicati di Brozolo, P. B. Harrington and K. J. Voorhees, Microbeam Analysis Society Meeting (1989).

"A Study of Electron Beam Evaporated Si02, Ti02, and A1203 Films Using RBS, HFS, and SIMS," S. M. Baumann, C. C. Martner, D. W. Martin, R. J. Bladiner and A. J. Braundmeier, Jr., Nuclear Instruments and Methods B45,454 (1990).

"Evaluate Wafer Cleaning Effectiveness," A. Hariri and R S. Hockett, Semiconductor International, page 74, August (1989).

"Analysis of Trace Impurities on Wafers from Cleaning," R S. Hockett, Fall Meeting of the Electrochemical Society (1989).

"Quantitative Measurement of Surface, Trace Metal Contamination on SOSISOI Using Total Reflection X-ray Fluorescence (TXIiF)," R S. Hockett and R. G. Wilson, Proceedings of IEEE SOSISOI Technology Conference, Stateline, NV (1989).

"Process Development and Control Using Total Reflection X-ray Fluorescence ('CXRF) for Surface Analysis," R. S. Hockett, SPIE Symposium an Surface and Interface Analysis of Microelectronic Materials Processing and Growth, Santa Glara, CA (1989).

"Growth and Characterization of ZnTe Film Grown an GaAs, 1nAs, f',aSb, and ZnTe," Y. Ralakanunanayake, B. H. Cole, J. O. McCaldin, D. H. Chow, J. R Soderstram, T. C. McGill and C. M. Jones, Applied Physics Letters 55. 1217 (1989).

"Unimolecular Decay Measurements of Secondary Ions From Organic Molecules by Time-of-Flight Mass Spectrometry," B. Schueler, R Beavis, W. Ens, D. E. Main, X. Tang and K. G. Standing, International Journal of Mass Spectrometry and Ion Processes 92, 185 (1989).

"Characterization of III-V Semiconductor Structures Using Electron Beam Elechorefleetance (EBER) Spectroscopy," M. H. Herman, I. D. Ward, S. E. Butt* Jr. and G. L. Francke, MRS'88, Fall Meeting, Boston MA (1988).

"Investigation of GaAs-Based Heterostructim Using Electron Beam Electroreflectance (EBER) Spectroscopy," M. H. Herman and I. D. Ward, International GaAs and Related Materials Conference, Karuizawa, Japan (1989).

"Photoluminescence and Electroretlectance Studies of Modulation-Doped Pseudomorphic AIGaAsJInGaAslGaAs Quantum Wells," A. Dodabalapur, V. P. Kesan, D. P. Neikirk, B. G. Streeiman, M. H. Herman and I. D. Ward, Journal of Electronic Materials 19,265 (1990).

"Measurement of the Ion Dissociation in a Reflecting Time-of-Flight Mass Spectrometer," F. J. Mayer, W. Ens, B. Schueler, K. G. Standing, X. Tang and J. B. Westmare, Proceedings of the 36th Annual Conference on Mass Spectrometry and Allied Topics, San Francisco, CA (1988).

"A Comparison of Positive Ion Relative Sensitivity Factors Far Si and Si02 Using Ar+ and 02} Ion Bombardment," S. W. Novak and R G. Wilson, SIMS VII, Monterey, CA (I989).

"Are Relative Sensitivity Factors Transferable Among SIMS Instruments?" D. S. Simons, P. H. Chi, P. M. Kahora, G. E. Lux, J. L. Moore, S. W. Nvvak, C. Schwartz, S. A. Schwarz, F. A. Stevie and R. G. Wilson, SIMS VII, Monterey, CA (1989).

"Round-Robin Study of Implants in Si and Si02 by SIMS, RBS, and NAA," P. Roitman, D. S. Simons, P. H. Chi, R M. Lindstrom, G. E. Lu1c, S. Bsumann, S. W. Novak, R. G. Wilson, D. Farrington, J. Keenan, F. A. Stevie, J. L. Moore, R B. Irwia, A. J. Filo, C. W. Magee, R. Alcorn and D. File, SIMS VII, Monterey, CA (1989).

"SIMS of H:LiNb03," R. G. Wilson, 5. W. Novak, J. M. Zavada, A. Loni and R M. De La Rue, SIMS VII, Monterey, CA (1989).

"Three-Dimensional Characterization of LiNb03 Waveguide.s by Secondary Ion Mass Spectrometry (SIMS) Image Depth Profiling," S. W. Novak, H. Kanber, S. Bar, C. Sridhar and R. G. Wilson, SPIE Symposium on Integrated Microelectronic Processing, Santa Clara, CA (1989).

"TOF-SIMS With a Stigmatic Ian Microscope," B. Schueler, SIMS VII, Monterey, CA (1989).

"A New Time-of-Flight Secondary Ion Microscope," B. Schueler, P. Sander and D. A. Reed, SIMS VII, Monterey, CA (1989).

"Quantitative Analysis of Surface Trace Metal Contamination on Substrates and Films by TXRF," R. S. Hockett, Boulder Damage Symposium on Optical Materials for High Power Lasers, Boulder, CO (1989).

"Reproducibility of the Quantitative SIMS Analysis of Ion-Implanted Si Wafers," G. Lux, SIMS VII, Monterey, CA (1989).

"Isotope Ratio Measuring of Interplanetary Dust Particles," R H. Fleming, G. P. Meeker, F. Radicati di Brozolo and D. F. Blake, SIMS VII, Monterey, CA (I989).

"Study of Possible Matrix Effects in the Quantitative Determination of Oxygen in Heavily-Doped Czochralski Silicon Crystals," R J. Bleiler, P. K. Chu, S. W Novak and R G. Wilson, SIMS VII, Monterey, CA (1989).

"Laterally Uniform Sputtering in Direct Bombardment SNMS," B. d. Hall, H. E. Burriesci and J. C. Huneke, SIMS VII, Monterey, CA (1989).

"Charge-Compensated Cs SIMS Applied to Semiconductor/Dielectric Heterostructures," R G. Wilson and C. J. Hitzman, SUM VII, Monterey, CA (1989).

"A Time-of-Flight Secondary Ion Microscope," B. Schueler, P. Sander and D. A. Reed, IVC-11, Cologne, Germany (1989).

"SIMS as a Bulk Analytical Tool," P. K. Chu, International Conference on VLSI and CAD, Seoul, Korea (1989).

"Characterizarion of Modulation Doped Pseudamarphic A1GaAsJInGaAsJGaAs HEW Structures by Electron Beam Electrorefiectance and Photoluminescence," M. H. Herman, I. D. Ward, R F. Kopf, S. J. Pearton and E. D. Jones, MRS Fall Meeting, Boston, MA (1989).

"Comparative Optical Studies of Cu, Mn, and C lmpurhies in Bulk LEC Grown GaAs by Electron Beam Electroreflectance (EBER) and Photoluminescence (PL)," M. H. Herman, P. J. Pearah, K. Elcess and I. D. Ward, MRS Fall Meeting, Boston, MA (1989).

"A Versatile Spectrometer System for Quantitative Surface and In-Depth Analysis with Secondary Ion and Secondary Neutral Mass Spectroscopy, Auger Electron and X-ray Photoelectron Spectroscopy," P. Sander, M. Altebockwinkel, W. Storm, L. Wiedmann and A. Benninghoven, Journal of Vacuum Science and Technology A7 ,3305 (1989).

"Characterization of Heavy Metal Contamination in Diamond Films Using SIMS, TXRF, and RBS," R. S. Hodcett and J. Knowles, MRS Fall Meeting, Boston, MA (1989).

"Studies on Ion Formation in a Glow Discharge Mass Spectrometry Ion Source," W. Vidh and J. C. Huneke, Spectroehimica Acta 458. 941 (1990).

"Progress in the "Load Line Calibration" Method for Quantitative Determination of [O] in Silicon by S1MS," I. Makovsky, M. Goldstein and P. Chu, SIMS VII, Monterey, CA (1989).

"Characterization of Thin Dielectric Films Using SIMS, RBS and LIMS," C. C. Martner, R. W. Odom, D. W. Martin, F. Radicati di Browlo and A. J. Braundmeier, Jr., SIMS VII, Monterey, CA (1989).

"Characterization of Undoped Pseudomorphic InGaAslGaAs Quantum Wells by Electron Beam Electrorefledance (EBER) and Photoluminescence (PL)," M. H. Herman, A. Dodabalapur,l. D. Wand and B. G. Streetman, MRS Fall Meeting, Boston, MA (1989).

"Surface and In-Depth Analysis of Hydrogenated Carbon Layers on Silicon and Germanium by Mass and Electron Spectroscopy," P. Sander, M. Ahebockwinkel, W. Storm, L. Wiedmann and A. Benninghoven, Journal of Vacuum Science and Technology B7, 517 (1989).

"Quantitative Measurement of Surface, Trace Metal Contamination on SOI Using Total Reflection X-ray Fluorescence (TXRF)," R S. Hockett and R. G. Wilson, 4th International Electrochemical Society Symposium on Silicon-on-Insulator Technology and Devices, Montreal, Canada (1990).

"Secondary Ion Mass Spectmmehy Depth Profiling of Proton-Exchanged LiNb03 Waveguides," R G. Wilson, S. W. Novak, J. M. Zavada, A. Loni and R M. De La Rue, Journal of Applied Physics 6G, 6055 (1989).

"Isotope Ratio Imaging of Interplanetary Dust Particles," R H. Fleming, G. P. Meeker, F. Radicati di Brozolo, D. E. Blake and L, D. White, Lunar and Planetary Institute XXI (1991J).

"A1GaAsIGaAs Double-Hete,rojunetion High Electron Mobility Transistors Grown by Low-Pressure Organometallic Vapor Phase Epitaaty," R.-T. Huang, Y: Y. Tu, D. Kasemset, N. Nauri, C. Cohrard and D. Ackley, Journal of Applied Physics 67,550 (1990).

"Changes in Relative Secondary Ion Yields for Dopants in GaAs Due to Sputter-Induced Topography Changes," S. P. Smith, SIMS VII, Monterey, CA (19$9).

494, "SIMS Depth Profiling of Ion Implant Standards in Diamond," S. P. Smith and R. G. Wilson, SIMS VII, Monterey, CA (1989).

"A Discussion of Modulation Mechanisms in Electron Bean Electroreflectance (EBER) and Comparison to Albernadve Modulation Techniques," M. H. Herman, International Conference on Modulation Spectroscopy, San Diego, CA (1990).

"Electron Beam Electroreflectance at Charles Evans dt Associates," K. Elcess, Euto III-Vs Review 3 32 (1990).

"Quantitative Measurement of Surface, Trace Metal Contamination on SOI Using Total Reflection X-ray Fluorescence (TXRF)," R S. Hockett and R G. Wilson, Proceedings of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, ECS (1990).

"Analysis of Trace Impurities on Wafers from Cleaning," R S. Hockett, 1990 Proceedings of the Institute of Environmental Sciences, New Orleans, LA (1990).

"Relative Sensitivity Factors in Glow Discharge Mass Spectrometry," W. Vieth and J. C. Huneke, Spectrochimica Acta B 46B. 137 (1991).

SOl. "Analysis of Implanted Boron Distribution Dependence on Tilt and Ratation Angle;" and "Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into <100> Silicon" [Same text] K. M. Klein, G. Park, A. F. Tasch, R B. Simonton and S. Novak, Electrochemical Society Spring Meeting (1990) and Journal of the Electrochemical Society 138, 2102 {1991}.

"Laser Microprobe Mass Spectrometry: Ion and Neutral Analysis," R W. Odom and B. Schueler, Chapter 5 of "Lasers and Mass Spectrometry" edited by D. M. Lulxnan, Oxford University Press (1990).

"The Measurement of Trace Metal Contamination on Gallium Arsenide Substrate Surfaces by Total Reflection X-ray Fluorescence (TXRF}," R S. Hockett, J. Metz and I. P. Tower, 5th Conference on Semi-Insulating III-V Materials, Toronto, Canada (1990).

"High Sensitivity Organic Surface Analysis and Imaging With TOF-SIMS," P. Sander, B. Schueler, J. A. Chakel, R W. Otiom and R H. Fieming, 38th ASMS Conference on Mass Spectrometry and Allied Topics, Tucson, AZ (1990).

"Anomalous Capacitance-Vohage Behavior Due to Dopaot Segregation and Carrier Trapping in As-Implanted Polycrystalline Silicon and Silicided Polycrystalline Silicon Gates," K. Park, S. Ba1ra, J. Lin, S. Yoganathan, S. Banetjee, J. Lee, S. Sun, J. Yeargain and G. Lux, Applied Physics Letters 56.2325 {1990}.

"Analysis of Nitrogen Pulsed Sputtered Beryllium," C, W. Price and J. C. Norberg, SIMS VII, Monterey, CA (1989).

"Analyses of Particles in Beryllium by Ian Imaging," C. W. Price and J. C. Norberg, SIMS VII, Monterey, CA (1989).

SOB. "Surface Analysis of Bulk Organic Polymers by Single-Photon Ionization," J. B. Pallix, U. Schuhk and G. H. Berdrer, SIMS VII, Monterey, CA (19$9).

"Laser Microprobe Post Ablation Ionization," R. W. Odom, SIMS VII, Monterey, CA (1989).

"Triple Focusing Allows Real-Time Surface Analysis," D. H. Wayae, R&D Magazine, page 74, August (1990).

"Atomically Layered Heteroepitaxial Growth of Single-Crystal Films of Superconducting Bi2Sr2Ca2Cu30x," J. N. Eckstein, I. Bozovic, K E. von Dessonneck, D. G. Schlom, J. S. Harris, Jr. and S. M. Baumann, Applied Physics Letters 57

"Surface Analysis of Trace Metals on GaAs by Total Reflection X-Ray Fluorescence (TXRF)," R. S. Hockett, Electrochemical Society Fall Meeting, Seattle, WA (1990).

"Near-Surface GaAsIGa0.qAIp.3As Quantum Wells: Interaction With the Surface States," J. M. Moison, K. Ekess, F. Houzay, J. Y. Marzin, J. M. Gerard, F. Barthe and M. Bensoussan, Physical Review B 41, 12945 (1990).

"Comparison and Spatial Profiling of Strain in [001]- and [111]-Oriented IaXGat_XAsIGaAs Superlaitices From Raman and X-ray Experiments," U. D. Veakateswaran...... K. Elcess....., Physical Review B 42.3100 (1990).

"Effect of Subsequent Heat Treatment on the Stability of Shallow Junctions Formed by Rapid Thermal Diffusion From Heavily Doped Polysilicon Films by Ian Implantation," B. Raicu,....... J. Norberg, I. D. Ward and A. Keenan, MRS Spring Meeting, San Francisco (1990).

"Imaging of Autoxidation Induced Chemduminescence," R H. Fleming and A. Y. Craig, Polymer Degradation and Stability 37,173 (1992).

"Applications of AES in Microelectronics," D. W. Harris and R. S. Nowicki, Chapter 6 of Practical Surface Analysis (Second Edition), Volume 1: Auger and X-ray Photoelectron Spectroscopy, Edited by D. Briggs and M. P. Seah, Wiley (1990).

S 18. "Microanalysis of Tungsten SilicidelPolysificon Interface: Effectiveness of In Situ RIE Clean on Removal of Native Oxide," R. S. Nowicki, P. Geraghty, D. W. Harris and G. Lux, MRS Spring Meeting, San Francisco {1990}.

"RBS Analysis of Intermixing in Annealed Samples of Pt/TilIII-V Semiconductors," W. Savin, B. E. Weir, A. Katz, S. N. G. Chu, S. Nakahara and D. W. Harris, MRS Spring Meeting, San Francisco (1990).

"Relative Surface Stoichiometry of High To Materials by Total Reflection X-ray Fluorescence," R. S. Hockett, Proceedings of SPIE, Volume 1287: High Tc Superconductivity: Thin Films and Applications, San Diego, CA (1990).

S?1. "E-Beam Electroreflectance of Short Period Si-Ge Superlattices," M. A. Gell, M. H. Herman, I. D. Ward, G. J. Gibbings, M. E. Jones, C. G. Tuppen, A. C. Churchill and P. C. Klipstein, Vacuum 41. 947 (1990).

"Electrical and Structural Properties of PfITilpt-InAs Ohmic Contacts," A. Katz, S. N. G. Chu, B, E. Weir, W. Savin, D. W. Harris, W. C. Dautremont-Smith, T. Tanbun-Ek and R. A. Logan, Journal of Vacuum Science and Technology B8 1125 (I990).

"Growth of in situ Doped Silicon Epitaxial Layer by Rapid Thermal Processing," S. K. Lee, Y. H. Ku, T. Y. Hsieh, K. H. Jung, D. L. Kwong, D. Spratt and P. Chu, Applied Physics Letters 5'1. ,1628 (1990).

"Selective Lnterdiffusioa of GalnAslAlInAs Quantum Wells by 5i02 Encapsulation and Rapid Thermal Annealing," S. OBrieq J. R Shealy, V. K. F. Chia and J. Y. Chi, Journal of Applied Physics 68, 5256 (1990).

"Temperature Dependence of the Resistance in the Pt/Ti NonaUoyed Ohmic Contacts m p-InAs Induced by Rapid Thermal Processing," A. Katz, S. N. G. Chu, B. E. Weir, W. C. Dautremont-Smith, R A. Logan, T. Tabun-Ek, W, Savin and D. W. Harris, Journal ofApplied Physics 68, 4141(1990~

"Organic Polymer Analysis by Laser Ionization Mass Spectrometry and Pattern Recognition Techniques," F. Radicati di Brozolo, R W. Odam, P. B. Harrington and K. J. Voorhees, Journal of Applied Polymer Science 41, 1737 (1990).

"Role of Dopant Incorporation in Low-Temperature Si Epitaxial Growth by Rapid Thermal Processing Chemical Vapor Deposition," T. Y. Hsieh, K. H. Jung, D. L. Kwong, C. J. Hitzman and R Brennan, IEEE Transactions on Electron Device Letters 39, 203 (1992).

"Detection and Elimination of Undesired Sulfur Doping in Isolated Areas of GaAs MMICs by Electrical and Chemical Failure Analysis," D. H. Rosenblatt, B. D. Cantos, T T. Kennel, C. H. 01son, R D. Remba, B. Polhamus and V. K. F. Chia (1990).

"High Resolution Scanning Auger Electron imaging of Mierotomed Sections of Murchison Matrix," F. Radicati di Brozolo, I. C. Ivanov and C. L. Anderson, 22nd Lunar & Planetary Science Conference, Houston, TX (1991).

"Quantitative Analysis of Surface Trace Metal Contamination on Substrates and Films by TXRF," R. S. Hockett, Topical Meeting on High Power Laser Optical Components, China Lake, CA (1989).

"Systematics of Positive Secondary Ion Mass Spectrometry Relative Sensitivity Factors for Si and SiD2 Measured Using Oxygen and Argon Ion Bombardment," S. W. Novak and R G. Wilson, Journal of Applied Physics 69 463 (1991).

"Systematics of Secondary-Ion-Mass Spectrometry Relative Sensitivity Factors Versus Electron Affinity and Ionization Potential For a Variety of Matrices Determined From Implanted Standards of more Than 70 Elements," R G. Wilson and S. W. Novak, Journal of Applied physics 69.466 (1991).

"Ultra-Shallow Junctions in Silicon Using Amorphous and Polycrystalline Silicon Solid Diffusion Sources," K. Park, S. Batra, S. Banerjee and G. Lnx, Journal of Electronic Materials 20, 261 (1991).

"Analysis of Pseudomorphic GaAsfInGaAsJAIGaAs Modulation-Doped Field-Effect Transistor Structures By Secondary-Ian Mass Spectrometry and Ion Channeling," K. T. Chan, C. L. Kirschbaum and K. M. Yu, Applied Physics Letters 5$ 1305 (1991).

"Development of the Long Valley, Califomia, Magma Chamber Recorded in Precaldera Rhyolite Lavas of Glass Mountain;' J_ M. Metz and G. A. Mahood, Contributions to Mineralogy and Petrology 106, 379 (1991).

"SIMS Image Deconvohrtion: Prospects for Better Lateral Resolution," J. W. Erickson and R S. Howland, SIMS VIII, Amsterdam, The Netherlands (1991).

"A Self-Aligned MOSFET Technology with As Ion Implantation into Titanium Silicide," Zhou Shifang, Li Bingzong, P. Chu and C. M. Jones, Acta Electronica Sinica 19, 109 (1991). [Note: Original paper in Chinese].

"Enhancement of Boron Diffusion Through Gate Oxides in Metal-Oxide-Semiconductor Devices Under Rapid Thermal Silicidation," J. Lin, K. Park, S. Batra, S. Banerjee, J. Lee and G. Lux, Applied Physics Letters 58,2123 (1991).

"TXRF Far Surface Contamination Defect Control," R S. Hockett, ECS Symposium "Defects in Silicon U," Washington, D. C. (1991).

"Three-Dimensional SIMS in Materials Analysis," R H. Fleming, Microbeam Analysis - 1991, San Francisco Press, Inc. (1991).

"Imaging of Autoxidation Induced Chemiluminescence," R H. Fleming and A. Y. Craig, Polymer Preprints 32. 648 (1991).

"SIMS Determination of Oxygen and Nitrogen in Nb-1%Zr Samples Using CsO+ and CsN' Secondary Ions," R J. Bleiler and J. C. Huneke, SIMS VIII, Amsterdam, The Netherlands (1991).

"Analysis of Ion-Implanted Amorphous and Polycrystalline Silicon Films as Diffusion Sources for Ultrasballow Junctions," K. Park, S. Batra, S. Banetjce, G. Lax and T. C. Smith, Journal of Applied Physics 70, 1397 (1991).

"Initial Growth of Ag/Si(100) Studied With High Spatial Resolution AES and SEM," F, C. H. Luo, G. G_ Hembree and J. A. Venables, MRS Fall Meeting, Boston, MA (1990).

"High-Resolution Microscopy of Auriferous Pyrite From the Post Deposit, Carlin District, Nevada," B. M. Bakken, R H. Fleming and M. F. Hochella, Jr., Process Mineralogy XI - Characterization of Metallurgical and Recyclable Products, The Minerals, Metals 8c Materials Society (1991).

"TJGtF Measurement of Substrate Backside Contamination," R S. HockM ECS 2nd international Symposium on Cleaning Technology in Semiconductor Device Manufacturing, P