Senior Management

Dr. Richard S. Hockett
Chief Scientist

From 2003 to date, Dr. Hockett has been Chief Scientist for CE&A and retained this position after its acquisition by EAG. In this position, Dr. Hockett provides technical assessment and direction for EAG management. From 1992 to 2000, Dr. Hockett was the Executive Vice President and Chief Operating Officer of CE&A, responsible for commercial analytical services, research and development, marketing and human resources, as well as mapping technical direction for the Company. From 1987 to 1992, Dr. Hockett was the Manager of TXRF Analytical Services and CE&A Distribution Manager for a Japanese TXRF instrument manufacturer. From 1981 to 1987, he was a Senior Research Group Leader for Analytical Development, Silicon Division of the Monsanto Company. From 1974 to 1981, Dr. Hockett held positions in commercial development, new ventures analysis, marketing and government contract research at Monsanto Company. Dr. Hockett has been an active member of three technical working groups of the International Technology Roadmap for Semiconductors since 1994. Dr. Hockett has been chairman of the Surface Analysis Task Force, Silicon Committee of the SEMI Standards Board for more than 13 years. In addition, Dr. Hockett served for more than 13 years as Chairman of the ASTM Section C (analytics) Committee. Dr. Hockett serves on a number of other domestic and international electronics industry and conference committees, and has been published widely in the field. He has a B.S. in Physics (cum laude) from Ohio State University, and an M.S. and Ph.D. in Physics from the University of Illinois, Champaign-Urbana.

Publications

• High Sensitivity Characterization of Contamination on Silicon Surfaces Using TXRF
• SIMS Measurements of Dopants in SOI Wafers
• Characterization of Ge Outdiffusion and Si Cap Thickness in Strained Si/SiGe Structures by SIMS
• SIMS Measurements of Metal Contamination in SOI
• The Measurement of Trace Metal Contamination on Gallium Arsenide Substrate Surfaces by TXRF
• Improvement in the SIMS Measurement of Bulk Nitrogen in Silicon
• Anomalous Diffusion of Nitrogen in Nitrogen-Implanted Silicon